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AN4137 Datasheet(PDF) 8 Page - Fairchild Semiconductor

Part # AN4137
Description  Design Guidelines
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Manufacturer  FAIRCHILD [Fairchild Semiconductor]
Direct Link  http://www.fairchildsemi.com
Logo FAIRCHILD - Fairchild Semiconductor

AN4137 Datasheet(HTML) 8 Page - Fairchild Semiconductor

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AN4137
APPLICATION NOTE
8
©2003 Fairchild Semiconductor Corporation
where Ids
peak is specified in equation (8), f
s is the FPS
switching frequency, Llk is the leakage inductance, Vsn is the
snubber capacitor voltage at the minimum input voltage and
full load condition, VRO is the reflected output voltage and
Rsn is the snubber resistor. Vsn should be larger than VRO
and it is typical to set Vsn to be 2~2.5 times of VRO. Too
small a Vsn results in a severe loss in the snubber network as
shown in equation (26). The leakage inductance is measured
at the switching frequency on the primary winding with all
other windings shorted.
Then, the snubber resistor with proper rated wattage should
be chosen based on the power loss. The maximum ripple of
the snubber capacitor voltage is obtained as
where fs is the FPS switching frequency. In general, 5~10%
ripple is reasonable.
The snubber capacitor voltage (Vsn) of equation (26) is for
the minimum input voltage and full load condition. When the
converter is designed to operate in CCM, the peak drain cur-
rent together with the snubber capacitor voltage decrease as
the input voltage increases. The snubber capacitor voltage
under maximum input voltage and full load condition is
obtained as
where fs is the FPS switching frequency, Llk is the primary
side leakage inductance, VRO is the reflected output voltage,
Rsn is the snubber resistor and Ids2 is the peak drain current at
the maximum input voltage and full load condition. When
the converter operates in CCM at the maximum input voltage
and full load condition (refer to equation (12)), the Ids2 of
equation (28) is obtained as
When the converter operates in DCM at the maximum input
voltage and full load condition (refer to equation (12)), the
Ids2 of equation (28) is obtained as
where Pin, VDC
max, V
RO and Lm are specified in equations
(1), (4), (5) and (7), respectively, and fs is the FPS switching
frequency.
From equation (28), the maximum voltage stress on the inter-
nal MOSFET is given by
where VDC
max is specified in equation (4).
Check if Vds
max is below 90% of the rated voltage of the
MOSFET (BVdss) as shown in figure 11. The voltage rating
of the snubber diode should be higher than BVdss. Usually,
an ultra fast diode with 1A current rating is used for the
snubber network.
In the snubber design in this section, neither the lossy dis-
charge of the inductor nor stray capacitance is considered. In
the actual converter, the loss in the snubber network is less
than the designed value due to this effects.
Figure 10. Circuit diagram of the snubber network
Figure 11. MOSFET drain voltage and snubber capacitor
voltage
P
sn
V
sn
()
2
R
sn
-----------------
1
2
---f
sLlK Ids
peak
()
2
sn
V
V
sn
V
RO
---------------------------
=
=
(26)
V
sn
V
sn1
C
sn Rsnfs
------------------------
=
(27)
V
sn2
V
RO
V
RO
()
2
2R
snLlkfs Ids2
()
2
+
+
2
--------------------------------------------------------------------------------------------
=
(28)
I
ds2
P
in
V
DC
max
V
RO
+


V
DC
max
V
RO
------------------------------------------------------------------
V
DC
max
V
RO
2L
mfs
V
DC
max
V
RO
+


-----------------------------------------------------------------------------
+
=
(29)
I
ds2
2P
in
f
s
L
m
----------------
=
(30)
V
ds
max
V
DC
max
V
sn2
+
=
(31)
Np
R
sn
C
sn
-
V
sn
+
V
DC
+
-
D
sn
Drain
GND
FPS
C
DC
-
V
RO
+
+
V
ds
-
L
lk
V
X
X
0 V
V
DC
max
V
RO
V
sn2
Effect of stray inductance (5-10V)
BVdss
Voltage Margin > 10% of BVdss


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