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VT3N2 Datasheet(PDF) 7 Page - PerkinElmer Optoelectronics |
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VT3N2 Datasheet(HTML) 7 Page - PerkinElmer Optoelectronics |
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7 / 76 page  2 What is a Photoconductive Cell? Semiconductor light detectors can be divided into two major categories: junction and bulk effect devices. Junction devices, when operated in the photoconductive mode, utilize the reverse characteristic of a PN junction. Under reverse bias, the PN junction acts as a light controlled current source. Output is proportional to incident illumination and is relatively independent of implied voltage as shown in Figure 1. Silicon photodiodes are examples of this type detector. Figure 1 Junction Photoconductor (Photodiode) Figure 2 Bulk Effect Photoconductor (Photocell) In contrast, bulk effect photoconductors have no junction. As shown in Figure 2, the bulk resistivity decreases with increasing illumination, allowing more photocurrent to flow. This resistive characteristic gives bulk effect photoconductors a unique quality: signal current from the detector can be varied over a wide range by adjusting the applied voltage. To clearly make this distinction, PerkinElmer Optoelectronics refers to it’s bulk effect photoconductors as photoconductive cells or simply photocells. Photocells are thin film devices made by depositing a layer of a photoconductive material on a ceramic substrate. Metal contacts are evaporated over the surface of the photoconductor and external electrical connection is made to these contacts. These thin films of photoconductive material have a high sheet resistance. Therefore, the space between the two contacts is made narrow and interdigitated for low cell resistance at moderate light levels. This construction is shown in Figure 3. Figure 3 Typical Construction of a Plastic Coated Photocell |
Similar Part No. - VT3N2 |
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Similar Description - VT3N2 |
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