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B5818WS Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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B5818WS Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 4 page  Schottky Barrier Diode B5817WS-B5819WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test Condition MIN MAX UNIT Reverse breakdown voltage V(BR) IR=1mA B5817WS B5818WS B5819WS 20 30 40 V Reverse voltage leakage current IR VR=20V B5817WS VR=30V B5818WS VR=40V B5819WS 1 mA B5817WS IF=1A IF=3A 0.45 0.75 B5818WS IF=1A IF=3A 0.55 0.875 Forward voltage VF B5819WS IF=1A IF=3A 0.6 0.9 V Diode capacitance CD VR=4V,f=1MHz 120 pF TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified www.diode.kr Diode Semiconductor Korea |
Similar Part No. - B5818WS |
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Similar Description - B5818WS |
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