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SMS1A0 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # SMS1A0
Description  SURFACE MOUNT SCHOTTKY
Download  2 Pages
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

SMS1A0 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

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SOLDERABLE ENDS
D2
D2=D1
+0
-0.20
0.5± 0.1
0.5± 0.1
4.9± 0.2
FEATURES
MECHANICAL DATA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
oC ambient temperature unless otherwise specified
Maximum recurrent peak reverse voltage
V
RRM
V
Maximum RMS voltage
VRWS
V
Maximum DC blocking voltage
VDC
V
Maximum average forw ord rectified current at
c T
L(SEE FIG.1) (NOTE 2)
I(AV)
A
Peak forw ard surge current 8.3ms single half-
c sine-w ave superimposed on rated load(JEDEC
c Method)
IFSM
A
Maximum instantaneous forw ard voltage at
v 1.0A(NOTE.1)
VF
V
Maximum DC reverse current @T
A=25
oC
at rated DC blocking voltage(NOTE1) @T
A=100
oC
RθJA
RθJL
Operating junction and storagetemperature range
TSTG
oC
Storage temperature range
TJ
oC
0.5
45
15
I
R
NOTE: 1.Pulse test:300μS pulse width,1%duty cy cle
SMS120---SMS1A0
2. P.C.B.mounted with 0.55"X0.55"(14.0X14.0mm2)copper pad areas
REVERSE VOLTAGE: 20 --- 100 V
CURRENT: 1.0 A
◇ Built-in strain relief
◇ Case:JEDEC DO-213AB,molded plastic over
1111passivated chip
◇ Low power loss,high effciency
◇ Plastic package has Underwriters Laborator
111 Flammability Classification 94V-0
Typical thermal resitance (NOTE2)
K/W
◇ High temperature soldering guaranteed:250
oC/10 1
11 seconds at terminals
SMS120 SMS130 SMS140
SMS160 SMS190 SMS1A0
◇ Polarity: Color band denotes cathode end
◇ Weight: 0.0046 ounces, 0.116 gram
mA
UNITS
20
30
40
60
90
100
DO - 213AB
◇ Low profile package
◇ For surface mounted applications
14
21
28
42
63
70
20
30
40
60
90
100
◇ Terminals:Solder Plated, solderable per MIL-STD-750,
1111Method 2026
◇ High current capability,low forward voltage drop
30
1.0
◇ For use in low voltage high frequency inverters,free
111 wheeling and polarity protection applications
◇ Guardring for overvoltage protection
-55--- +150
-55--- +150
0.5
0.7
0.79
5.0
◇ Metal silicon junction, majority carrier conduction
◇ High surge capability
Dimensions in millimeters
BARRIER RECTIFIERS
SURFACE MOUNT SCHOTTKY
Diode Semiconductor Korea
www.diode.kr


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