-

+

3.7± 0.35

22.3± 0.3

AC

2.4± 0.2

1.2± 0.15

5.0± 0.3

3.8± 0.2

0.5± 0.15

2.5± 0.2

4 45°

FEATURES

Ideal for printed circuit board

Reliable low cos t cons truction utilizing m olded

plas tic technique

Plas tic m aterrial has U/L flam m ability clas s ification

94V-O

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unles s otherwis e s pecified.

Single phase,half wave,60 Hz,res istive or inductive load. For capacitive load,derate by 20%.

GBU

6D

GBU

6G

GBU

6J

GBU

6K

GBU

6M

UNITS

Maximum recurrent peak reverse voltage

200

400

600

800

1000

V

Maximum RMS voltage

140

280

420

560

700

V

Maximum DC blocking voltage

200

400

600

800

1000

V

Maximum average forw ard Tc=100

output current

Peak forw ard surge current

8.3ms single half-sine-w ave

superimposed on rated load

Maximum instantaneous forw ard voltage

at 3.0 A

V

Maximum reverse current

@T

μA

at rated DC blocking voltage

@T

mA

Typical junction capacitance per leg (note 3)

pF

Typical thermal resistance per leg

(note 2)

(note 1)

Operating junction temperature range

Storage temperature range

2. Recom m ended mounting position is to bolt down on heatsink with silicone thermal com pound f or m aximum heat transf er with #6 screws

GBU6A --- GBU6M

3. Measured at 1.0 MHz and applied rev erse v oltage of 4.0 v olts.

GBU

6A

GBU

6B

50

100

1.0

500.0

175.0

A

5.0

Mounting pos ition: Any

6.0

SILICON BRIDGE RECT IFIERS

A

100

70

VOLT AGE RANGE: 50 --- 1000 V

CURRENT :

6.0 A

35

5

0

GBU

NOTE: 1. Unit case m ounted on 2.6x1.4x0.06" thick (6.5x3.5x0.15cm ) AI. Plate.

- 55 ---- + 150

- 55 ---- + 150

2.2

/W

211

94

7.4

Dimensions in millimeters

Glass passivated chip junctions

Diode Semiconductor Korea

www.diode.kr