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KBPC810 Datasheet(PDF) 1 Page - Diode Semiconductor Korea

Part # KBPC810
Description  SILICON BRIDGE RECTIFIERS
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Manufacturer  DSK [Diode Semiconductor Korea]
Direct Link  http://www.diode.kr/
Logo DSK - Diode Semiconductor Korea

KBPC810 Datasheet(HTML) 1 Page - Diode Semiconductor Korea

  KBPC810 Datasheet HTML 1Page - Diode Semiconductor Korea KBPC810 Datasheet HTML 2Page - Diode Semiconductor Korea  
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φ 1 .3± 0.1
12.6± 0.5
18.9± 0.4
φ 3.84 TYP.
FEATURES
Rating to 1000V PRV
Surge overload rating to 125 Amperes peak
Ideal for printed circuit board
Reliable low cost construction utilizing molded
plastic technique results in inexpensive product
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
KBPC8005---KBPC810
Lead solderable per MIL-STD-202 method 208
SILICON BRIDGE RECTIFIERS
Mounting: thru hole for # 6 screw mounting
VOLTAGE RANGE: 50 --- 1000 V
CURRENT:
8.0 A
BR8
Dimensions in millimeters
Diode Semiconductor Korea
www.diode.kr
NOTES:
1.Unit mounted on 8.7” x 8.7” x0.24” thick(22x22x0.6cm)Al.plate.
2.Unit mounted on P.C. board with 0.47” x 0.47”(12x12mm) copper pads,0.375”(9.5mm) lead length.
125.0
64
10
1.0
2500
6.0
-55 to +125
-55 to +150
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
1000
KPBC
8005
8.0
6.0
6.0
KPBC
801
KPBC
802
KPBC
806
KPBC
808
KPBC
810
KPBC
804
BR805
BR84
BR81
BR82
BR86
BR88
BR810
VOLTS
VOLTS
VOLTS
SYMBOLS
UNITS
Amps
Amps
VRRM
VRMS
VDC
I(AV)
IFSM
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average
TC=50 C
(Note 1)
forward output
TC=100 C (Note 1)
rectified current at
TA=50 C
(Note 2)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Rating for Fusing(t<8.3ms)
Maximum instantaneous forward voltage drop
per bridge element at 4.0A
Maximum DC reverse current
TA=25 C
at rated DC blocking voltage
TA=100 C
Isolation voltage from case to leads
Typical Thermal Resistance (Note 1)
Operating junction temperature range
storage temperature range
IR
Volts
A
u
C
C/W
mA
C
VAC
A s
2
I t
VISO
RqJA
TJ
TSTG
2
VF
1.1
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.


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