TM2CN64EFN 2097152 BY 64BIT

TM4CN64EFN 4194304 BY 64BIT

SYNCHRONOUS DYNAMIC RAM MODULES

SMMS714 − MAY 1998

8

POST OFFICE BOX 1443

’xCN64EFN-10

UNIT

MIN

MAX

UNIT

tCK2

Cycle time, CLK, CAS latency = 2

15

ns

tCK3

Cycle time, CLK, CAS latency = 3

10

ns

tCH

Pulse duration, CLK high

3

ns

tCL

Pulse duration, CLK low

3

ns

tAC2

Access time, CLK high to data out, CAS latency = 2 (see Note 8)

8

ns

tAC3

Access time, CLK high to data out, CAS latency = 3 (see Note 8)

7.5

ns

tOH

Hold time, CLK high to data out

3

ns

tLZ

Delay time, CLK high to DQ in low-impedance state (see Note 9)

2

ns

tHZ

Delay time, CLK high to DQ in high-impedance state (see Note 10)

8

ns

tIS

Setup time, address, control, and data input

3

ns

tIH

Hold time, address, control, and data input

1

ns

tCESP Power-down/self-refresh exit time

10

ns

tRAS

Delay time, ACTV command to DEAC or DCAB command

50

100 000

ns

tRC

Delay time, ACTV, REFR, or SLFR exit to ACTV, MRS, REFR, or SLFR command

80

ns

tRCD

Delay time, ACTV command to READ, READ-P, WRT, or WRT-P command

(see Note 11)

30

ns

tRP

Delay time, DEAC or DCAB command to ACTV, MRS, REFR, or SLFR command

30

ns

tRRD

Delay time, ACTV command in one bank to ACTV command in the other bank

20

ns

tRSA

Delay time, MRS command to ACTV, MRS, REFR, or SLFR command

20

ns

tAPR

Final data out of READ-P operation to ACTV, MRS, SLFR, or REFR command

tRP − (CL −1) * tCK

ns

tAPW

Final data in of WRT-P operation to ACTV, MRS, SLFR, or REFR command

tRP + tCK

ns

tT

Transition time (see Note 12)

1

5

ns

tREF

Refresh interval

64

ms

nCCD

Delay time, READ or WRT command to an interrupting command

1

cycle

nCDD

Delay time, CS low or high to input enabled or inhibited

0

0

cycle

nCLE

Delay time, CKE high or low to CLK enabled or disabled

1

1

cycle

nCWL

Delay time, final data in of WRT operation to READ, READ-P, WRT, WRT-P

1

cycle

nDID

Delay time, ENBL or MASK command to enabled or masked data in

0

0

cycle

nDOD

Delay time, ENBL or MASK command to enabled or masked data out

2

2

cycle

nHZP2

Delay time, DEAC or DCAB command to DQ in high-impedance state,

CAS latency = 2

2

cycle

nHZP3

Delay time, DEAC or DCAB command to DQ in high-impedance state,

CAS latency = 3

3

cycle

nWCD Delay time, WRT command to first data in

0

0

cycle

nWR

Delay time, final data in of WRT operation to DEAC or DCAB command

1

cycle

† All references are made to the rising transition of CK unless otherwise noted.

NOTES:

8. tAC is referenced from the rising transition of CK that precedes to the data-out cycle. For example, the first-data out tAC is referenced

from the rising transition of CK that is CAS latency − one cycle after the READ command. Access time is measured at output

reference level 1.4 V.

9. tLZ is measured from the rising transition of CK that is CAS latency − one cycle after the READ command.

10. tHZ MAX defines the time at which the outputs are no longer driven and is not referenced to output voltage levels.

11. For read or write operations with automatic deactivate, tRCD must be set to satisfy minimum tRAS.

12. Transition time, tT, is measured between VIH and VIL.