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TMS28F020-10C5FML Datasheet(PDF) 7 Page - Texas Instruments

Part # TMS28F020-10C5FML
Description  Latchup Immunity of 250 mA on All Input
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TMS28F020-10C5FML Datasheet(HTML) 7 Page - Texas Instruments

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TMS28F020
262144 BY 8 BIT
FLASH MEMORY
SMJS020C − OCTOBER 1994 − REVISED JANUARY 1998
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251−1443
command definitions
read command
Memory contents can be accessed while VPP is high or low. When VPP is high, writing 00h into the command
register invokes the read operation. When the device is powered up, the default contents of the command
register are 00h and the read operation is enabled. The read operation remains enabled until a different valid
command is written to the command register.
algorithm-selection-mode command
The
algorithm-selection
mode
is
activated
by
writing
90h
into
the
command
register.
The
manufacturer-equivalent code (89h) is identified by the value read from address location 00000h, and the
device-equivalent code (BDh) is identified by the value read from address location 00001h.
set-up-erase/erase commands
The erase algorithm begins with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the erase mode,
write the set-up-erase command, 20h, into the command register. Writing a second erase command, 20h, into
the command register invokes the erase operation. The erase operation begins on the rising edge of W and ends
on the rising edge of the next W. The erase operation requires 10 ms to complete before the erase-verify
command, A0h, can be loaded.
Maximum erase timing is controlled by the internal stop timer. When the stop timer terminates the erase
operation, the device enters an inactive state and remains inactive until a command is received.
erase-verify command
All bytes must be verified following an erase operation. After the erase operation is complete, an erased byte
can be verified by writing the erase-verify command, A0h, into the command register. This command causes
the device to exit the erase mode on the rising edge of W. The address of the byte to be verified is latched on
the falling edge of W. The erase-verify operation remains enabled until a command is written to the command
register.
To determine whether or not all the bytes have been erased, the TMS28F020 applies a margin voltage to each
byte. If FFh is read from the byte, all bits in the designated byte have been erased. The erase-verify operation
continues until all of the bytes have been verified. If FFh is not read from a byte, an additional erase operation
must be executed. Figure 1 shows the combination of commands and bus operations for electrically erasing
the TMS28F020.
set-up-program/program commands
The programming algorithm begins with E = VIL, W = VIL, G = VIH, VPP = VPPH, and VCC = 5 V. To enter the
programming mode, write the set-up-program command, 40h, into the command register. The programming
operation is invoked by the next write-enable pulse. Addresses are latched internally on the falling edge of W,
and data is latched internally on the rising edge of W. The programming operation begins on the rising edge
of W and ends on the rising edge of the next W pulse. The program operation requires 10
µs for completion
before the program-verify command, C0h, can be loaded.
Maximum program timing is controlled by the internal stop timer. When the stop timer terminates the program
operation, the device enters an inactive state and remains inactive until a command is received.


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