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TEA1208T Datasheet(PDF) 3 Page - NXP Semiconductors |
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TEA1208T Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 20 page  2002 Nov 15 3 Philips Semiconductors Product specification High efficiency DC/DC converter TEA1208T QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Voltage levels UP CONVERSION; pin U/D = LOW VI input voltage VI(start) − 5.50 V VO output voltage 2.80 − 5.50 V VI(start) start-up input voltage IL < 62 mA 1.40 1.60 1.85 V DOWN CONVERSION; pin U/D = HIGH VI input voltage 2.80 − 5.50 V VO output voltage 1.30 − 5.50 V GENERAL Vfb feedback voltage 1.19 1.24 1.29 V Current levels Iq quiescent current on pin 3 down conversion; VI = 3.6 V 52 65 72 µA Ishdwn current in shut-down state − 210 µA ILX maximum continuous current on pin 4 Tamb =80 °C −− 0.30 A ∆I lim current limit deviation Ilim = 0.5 to 2.5 A up conversion −17.5 − +17.5 % down conversion −17.5 − +17.5 % Power MOSFETs RDSon drain-to-source on-state resistance N-type 0.10 0.20 0.30 Ω P-type 0.10 0.22 0.35 Ω Efficiency η 1 efficiency up conversion VI = 3.6 V; VO = 4.6 V; L1 = 10 µH IL =1mA − 88 − % IL = 200 mA − 95 − % η 2 efficiency down conversion VI = 3.6 V; VO = 2.0 V; L1 = 10 µH IL =1mA − 86 − % IL = 200 mA − 93 − % Timing fsw switching frequency PWM mode 220 275 330 kHz fsync synchronization clock input frequency 4 6.5 20 MHz tres response time from standby to P0(max) − 50 −µs |
Similar Part No. - TEA1208T |
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Similar Description - TEA1208T |
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