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TMS45160 Datasheet(PDF) 4 Page - Texas Instruments |
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TMS45160 Datasheet(HTML) 4 Page - Texas Instruments |
4 / 23 page TMS45160, TMS45160P 262144WORD BY 16BIT HIGHSPEED DYNAMIC RANDOMACCESS MEMORIES SMHS160D − AUGUST 1992 − REVISED JUNE 1995 4 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251−1443 power up To achieve proper device operation, an initial pause of 200 µs followed by a minimum of eight RAS cycles is required after power up to the full VCC level.These eight initialization cycles must include at least one refresh (RAS-only or xCBR) cycle. |
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