TMS45160 datasheet(4/23 Pages) TI1

Part #	TMS45160

Description	262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES

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TMS45160, TMS45160P

262144WORD BY 16BIT HIGHSPEED

DYNAMIC RANDOMACCESS MEMORIES

SMHS160D − AUGUST 1992 − REVISED JUNE 1995

4

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251−1443

power up

To achieve proper device operation, an initial pause of 200

µs followed by a minimum of eight RAS cycles is

required after power up to the full VCC level.These eight initialization cycles must include at least one refresh

(RAS-only or xCBR) cycle.

Similar Part No. - TMS45160

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Texas Instruments	TMS45160P	353Kb / 23P	[Old version datasheet] 262144-WORD BY 16-BIT HIGH-SPEED DYNAMIC RANDOM-ACCESS MEMORIES

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