TMS416169, TMS418169

1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS

SMKS886C – MAY1995 – REVISED MARCH 1996

7

POST OFFICE BOX 1443

TMS416169

electrical characteristics over recommended ranges of supply voltage and operating free-air

temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS†

’416169 - 60

’416169 - 70

’416169 - 80

UNIT

PARAMETER

TEST CONDITIONS†

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

VOH

High-level output

voltage

IOH = – 5 mA

2.4

2.4

2.4

V

VOL

Low-level output voltage

IOL = 4.2 mA

0.4

0.4

0.4

V

II

Input current (leakage)

VCC = 5.5 V,

VI = 0 V to 6.5 V,

All other inputs = 0 V to VCC

± 10

± 10

± 10

µA

IO

Output current (leakage)

VCC = 5.5 V,

VO = 0 V to VCC,

xCAS high

± 10

± 10

± 10

µA

ICC1ठRead- or write-cycle current

VCC = 5.5 V,

Minimum cycle

90

80

70

mA

ICC2

Standby current

VIH = 2.4 V ( TTL),

After 1 memory cycle,

RAS and xCAS high

2

2

2

mA

ICC2

Standby current

VIH = VCC – 0.2 V (CMOS),

After 1 memory cycle,

RAS and xCAS high

1

1

1

mA

ICC3§

Average refresh current

(RAS-only refresh or CBR)

VCC = 5.5 V,

Minimum cycle,

RAS cycling,

xCAS high (RAS only),

RAS low after xCAS low (CBR)

90

80

70

mA

ICC4ঠAverage EDO current

VCC = 5.5 V,

tHPC = MIN,

RAS low,

xCAS cycling

100

90

80

mA

† For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements.

‡ Measured with outputs open

§ Measured with a maximum of one address change while RAS = VIL

¶ Measured with a maximum of one address change while xCAS = VIH