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TMS418169-60DZ Datasheet(PDF) 7 Page - Texas Instruments |
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TMS418169-60DZ Datasheet(HTML) 7 Page - Texas Instruments |
7 / 26 page TMS416169, TMS418169 1048576-WORD BY 16-BIT EXTENDED DATA OUT HIGH-SPEED DRAMS SMKS886C – MAY1995 – REVISED MARCH 1996 7 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 TMS416169 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER TEST CONDITIONS† ’416169 - 60 ’416169 - 70 ’416169 - 80 UNIT PARAMETER TEST CONDITIONS† MIN MAX MIN MAX MIN MAX UNIT VOH High-level output voltage IOH = – 5 mA 2.4 2.4 2.4 V VOL Low-level output voltage IOL = 4.2 mA 0.4 0.4 0.4 V II Input current (leakage) VCC = 5.5 V, VI = 0 V to 6.5 V, All other inputs = 0 V to VCC ± 10 ± 10 ± 10 µA IO Output current (leakage) VCC = 5.5 V, VO = 0 V to VCC, xCAS high ± 10 ± 10 ± 10 µA ICC1‡§ Read- or write-cycle current VCC = 5.5 V, Minimum cycle 90 80 70 mA ICC2 Standby current VIH = 2.4 V ( TTL), After 1 memory cycle, RAS and xCAS high 2 2 2 mA ICC2 Standby current VIH = VCC – 0.2 V (CMOS), After 1 memory cycle, RAS and xCAS high 1 1 1 mA ICC3§ Average refresh current (RAS-only refresh or CBR) VCC = 5.5 V, Minimum cycle, RAS cycling, xCAS high (RAS only), RAS low after xCAS low (CBR) 90 80 70 mA ICC4‡¶ Average EDO current VCC = 5.5 V, tHPC = MIN, RAS low, xCAS cycling 100 90 80 mA † For conditions shown as MIN / MAX, use the appropriate value specified in the timing requirements. ‡ Measured with outputs open § Measured with a maximum of one address change while RAS = VIL ¶ Measured with a maximum of one address change while xCAS = VIH |
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