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CSD23285F5T Datasheet(PDF) 3 Page - Texas Instruments |
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CSD23285F5T Datasheet(HTML) 3 Page - Texas Instruments |
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3 / 14 page  3 CSD23285F5 www.ti.com SLPS608 – AUGUST 2016 Product Folder Links: CSD23285F5 Submit Documentation Feedback Copyright © 2016, Texas Instruments Incorporated 5 Specifications 5.1 Electrical Characteristics TA = 25°C (unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-source voltage VGS = 0 V, IDS = –250 μA –12 V IDSS Drain-to-source leakage current VGS = 0 V, VDS = –9.6 V –100 nA IGSS Gate-to-source leakage current VDS = 0 V, VGS = –5 V –25 nA VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = –250 μA –0.40 –0.65 –0.95 V RDS(on) Drain-to-source on-resistance VGS = –1.5 V, IDS = –1 A 64 130 m Ω VGS = –1.8 V, IDS = –1 A 49 80 VGS = –2.5 V, IDS = –1 A 38 47 VGS = –4.5 V, IDS = –1 A 29 35 gfs Transconductance VDS = –1.2 V, IDS = –1 A 8.9 S DYNAMIC CHARACTERISTICS Ciss Input capacitance VGS = 0 V, VDS = –6 V, ƒ = 1 MHz 483 628 pF Coss Output capacitance 305 397 pF Crss Reverse transfer capacitance 37 48 pF RG Series gate resistance 17 Ω Qg Gate charge total (–4.5 V) VDS = –6 V, IDS = –1 A 3.2 4.2 nC Qgd Gate charge gate-to-drain 0.48 nC Qgs Gate charge gate-to-source 0.66 nC Qg(th) Gate charge at Vth 0.40 nC Qoss Output charge VDS = –6 V, VGS = 0 V 4.8 nC td(on) Turnon delay time VDS = –6 V, VGS = –4.5 V, IDS = –1 A, RG = 2 Ω 15 ns tr Rise time 5 ns td(off) Turnoff delay time 30 ns tf Fall time 13 ns DIODE CHARACTERISTICS VSD Diode forward voltage ISD = –1 A, VGS = 0 V –0.73 –1 V (1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu. (2) Device mounted on FR4 material with minimum Cu mounting area. 5.2 Thermal Information TA = 25°C (unless otherwise stated) THERMAL METRIC MIN TYP MAX UNIT RθJA Junction-to-ambient thermal resistance(1) 90 °C/W Junction-to-ambient thermal resistance(2) 245 |
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