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A29801BUV-55UF Datasheet(PDF) 2 Page - AMIC Technology |
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A29801BUV-55UF Datasheet(HTML) 2 Page - AMIC Technology |
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2 / 40 page  A29801B Series 1M X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Preliminary Boot Sector Flash Memory PRELIMINARY (June, 2016, Version 0.0) 1 AMIC Technology, Corp. Features Single power supply operation - Full voltage range: 4.5 to 5.5 volt for read and write operations Access time: - 55ns (max.) Current: - 20mA typical active read current - 30mA typical program/erase current - 6uA typical CMOS standby Flexible sector architecture - 16 Kbyte/ 8 KbyteX2/ 32 Kbyte/ 64 KbyteX15 sectors - 8 Kword/ 4 KwordX2/ 16 Kword/ 32 KwordX15 sectors - Any combination of sectors can be erased - Supports full chip erase - Sector protection: A hardware method of protecting sectors to prevent any inadvertent program or erase operations within that sector. Temporary Sector Unprotect feature allows code changes in previously locked sectors Industrial operating temperature range: -40ºC to +85ºC for -U series Unlock Bypass Program Command - Reduces overall programming time when issuing multiple program command sequence Top or bottom boot block configurations available Embedded Algorithms - Embedded Erase algorithm will automatically erase the entire chip or any combination of designated sectors and verify the erased sectors - Embedded Program algorithm automatically writes and verifies data at specified addresses Minimum 100,000 program/erase cycles per sector 20-year data retention at 125ºC - Reliable operation for the life of the system Compatible with JEDEC-standards - Pinout and software compatible with single-power-supply Flash memory standard - Superior inadvertent write protection Data Polling and toggle bits - Provides a software method of detecting completion of program or erase operations Ready / BUSY pin (RY / BY ) - Provides a hardware method of detecting completion of program or erase operations Erase Suspend/Erase Resume - Suspends a sector erase operation to read data from, or program data to, a non-erasing sector, then resumes the erase operation Hardware reset pin ( RESET ) - Hardware method to reset the device to reading array data Package options - 48-pin TSOP (I) or 48-ball TFBGA - All Pb-free (Lead-free) products are RoHS2.0 compliant General Description The A29801B is an 8Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes of 8 bits or 524,288 words of 16 bits each. The 8 bits of data appear on I/O0 - I/O7; the 16 bits of data appear on I/O0~I/O15. The is offered in 48-ball FBGA and 48-Pin TSOP packages. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. Additional 12.0 volt VPP is not required for in-system write or erase operations. However, the A29801B can also be programmed in standard EPROM programmers. The A29801B has the first toggle bit, I/O6, which indicates whether an Embedded Program or Erase is in progress, or it is in the Erase Suspend. Besides the I/O6 toggle bit, the A29801B has a second toggle bit, I/O2, to indicate whether the addressed sector is being selected for erase. The A29801B also offers the ability to program in the Erase Suspend mode. The standard A29801B offers access time of 55ns, allowing high-speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable ( CE ), write enable ( WE ) and output enable ( OE ) controls. The device requires only a single 5.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The A29801B is entirely software command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by writing the proper program command sequence. This initiates the Embedded Program algorithm - an internal algorithm that automatically times the program pulse widths and verifies proper program margin. Device erasure occurs by executing the proper erase command sequence. This initiates the Embedded Erase algorithm - an internal algorithm that automatically preprograms the array (if it is not already programmed) |
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