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IRLBA1304 Datasheet(PDF) 2 Page - International Rectifier |
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IRLBA1304 Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRLBA1304 2 www.irf.com Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) I SD ≤ 110A, di/dt ≤ 170A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C Notes: Starting T J = 25°C, L = 230µH RG = 25Ω, IAS = 100A. (See Figure 12) Pulse width ≤ 300µs; duty cycle ≤ 2%. S D G Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current MOSFET symbol (Body Diode) ––– ––– showing the ISM Pulsed Source Current integral reverse (Body Diode) ––– ––– p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 110A, VGS = 0V trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 110A Qrr Reverse RecoveryCharge ––– 250 380 nC di/dt = 100A/µs ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Source-Drain Ratings and Characteristics 185* 740 A Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 40 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.043 ––– V/°C Reference to 25°C, ID = 1mA ––– ––– 0.0040 VGS = 10V, ID = 110A ––– ––– 0.0065 VGS = 4.5V, ID = 93 VGS(th) Gate Threshold Voltage 1.0 ––– ––– V VDS = VGS, ID = 250µA gfs Forward Transconductance 120 ––– ––– S VDS = 25V, ID = 110A ––– ––– 25 µA VDS = 40V, VGS = 0V ––– ––– 250 VDS = 32V, VGS = 0V, TJ = 150°C Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -16V Qg Total Gate Charge ––– ––– 140 ID = 110A Qgs Gate-to-Source Charge ––– ––– 39 nC VDS = 32V Qgd Gate-to-Drain ("Miller") Charge ––– ––– 79 VGS = 4.5V, See Fig. 6 and 13 td(on) Turn-On Delay Time ––– 21 ––– VDD = 20V tr Rise Time ––– 350 ––– ID = 110A td(off) Turn-Off Delay Time ––– 45 ––– RG = 0.9Ω tf Fall Time ––– 103 ––– RD = 0.18Ω,See Fig. 10 Between lead, ––– ––– 6mm (0.25in.) from package and center of die contact Ciss Input Capacitance ––– 7660 ––– VGS = 0V Coss Output Capacitance ––– 2150 ––– pF VDS = 25V Crss Reverse Transfer Capacitance ––– 460 ––– ƒ = 1.0MHz, See Fig. 5 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) nH IGSS S D G LS Internal Source Inductance ––– 5.0 ––– RDS(on) Static Drain-to-Source On-Resistance LD Internal Drain Inductance 2.0 IDSS Drain-to-Source Leakage Current Ω |
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