FMSBSS123 datasheet(3/7 Pages) FORMOSA

Part #	FMSBSS123

Description	N-Channel Power MOSFET

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Manufacturer	FORMOSA [Formosa MS]

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Formosa MS

PARAMETER

Gate-body leakage current

Gate threshold voltage

Static drain-source on-resistance

Forward transconductance

Intput capacitance

Reverse transfer capacitance

Turn-On Delay Time

Turn-Off Delay Time

VGS = 0V, ID= 250uAdc

VGS = 20Vdc, VDS=0

VDS =

, ID = 1.0mAdc

VGS

VGS = 10Vdc, ID = 100mAdc

CONDITIONS

Symbol

BVDSS

IGSS

VGS(th)

IDSS

gfs

Ciss

td(on)

MIN.

100

80

TYP.

MAX.

50

UNIT

Vdc

nAdc

Vdc

Ω

mmhos

V

pF

ns

o

Electrical characteristics (At T =25 C unless otherwise noted)

A

Drain-source breakdown voltage

VCC = 30Vdc RGS=50Ω

IC=0.28Adc, VGS=10Vdc

,

VDS =25Vdc, ID =100mAdc

Zero gate voltage drain current

VGS = 0V, VDS = 100Vdc

O

, TJ = 25 C

O

VGS = 0V, VDS = 100Vdc, TJ = 125 C

60

15

µAdc

RDS(ON)

20

0.8

20

Off Characteristics

On Characteristics *4

2.8

Diode forward on-voltage

O

VGS =0Vdc,

J

=25 C,

ID = 0.34Adc, T

1.3

Dynamic Characteristics

Output capacitance

Coss

Crss

VDS = 25Vdc, VGS = 0V,

f=1.0MHz

9.0

4.0

td(off)

40

VSD

6.0

*4: Pulse Test: Pulse Width ≤300us, Duty Cycle ≤2. 0%

FMSBSS123

5.0

Document ID

Issued Date

Revised Date

Revision

Page.

DS-231146

2009/08/10

2011/07/21

C

7

Switching Characteristics *4

Reverse Diode

N-Channel Power MOSFET

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