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LM5104MX Datasheet(PDF) 1 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LM5104MX
Description  High Voltage Half-Bridge Gate Driver with Adaptive Delay
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LM5104MX Datasheet(HTML) 1 Page - National Semiconductor (TI)

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LM5104
High Voltage Half-Bridge Gate Driver with Adaptive
Delay
General Description
The LM5104 High Voltage Gate Driver is designed to drive
both the high side and the low side N-Channel MOSFETs in
a synchronous buck configuration. The floating high-side
driver is capable of working with supply voltages up to 100V.
The high side and low side gate drivers are controlled from a
single input. Each change in state is controlled in an adap-
tive manner to prevent shoot-through issues. In addition to
the adaptive transition timing, an additional delay time can
be added, proportional to an external setting resistor. An
integrated high voltage diode is provided to charge high side
gate drive bootstrap capacitor. A robust level shifter operates
at high speed while consuming low power and providing
clean level transitions from the control logic to the high side
gate driver. Under-voltage lockout is provided on both the
low side and the high side power rails. This device is avail-
able in the standard SOIC-8 pin and the LLP-10 pin pack-
ages.
Features
n
Drives both a high side and low side N-channel
MOSFET
n
Adaptive rising and falling edges with programmable
additional delay
n
Single input control
n
Bootstrap supply voltage range up to 118V DC
n
Fast turn-off propagation delay (25 ns typical)
n
Drives 1000 pF loads with 15 ns rise and fall times
n
Supply rail under-voltage lockout
Typical Applications
n
Current Fed Push-Pull Power Converters
n
High Voltage Buck Regulators
n
Active Clamp Forward Power Converters
n
Half and Full Bridge Converters
Package
n
SOIC-8
n
LLP-10 (4 mmx4mm)
Simplified Block Diagram
20089003
FIGURE 1.
January 2004
© 2004 National Semiconductor Corporation
DS200890
www.national.com


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