MC74VHCT32A

http://onsemi.com

3

DC ELECTRICAL CHARACTERISTICS

VCC

TA = 25°C

TA ≤ 85°C

TA ≤ 125°C

Symbol

Parameter

Test Conditions

(V)

Min

Typ

Max

Min

Max

Min

Max

Unit

VIH

Minimum High–Level

Input Voltage

3.0

4.5

5.5

1.2

2.0

2.0

1.2

2.0

2.0

1.2

2.0

2.0

V

VIL

Maximum Low–Level

Input Voltage

3.0

4.5

5.5

0.53

0.8

0.8

0.53

0.8

0.8

0.53

0.8

0.8

V

VOH

Minimum High–Level

Output Voltage

VIN = VIH or VIL

IOH = –50µA

3.0

4.5

2.9

4.4

3.0

4.5

2.9

4.4

2.9

4.4

V

VIN = VIH or VIL

VIN = VIH or VIL

IOH = –4mA

IOH = –8mA

3.0

4.5

2.58

3.94

2.48

3.80

2.34

3.66

V

VOL

Maximum Low–Level

Output Voltage

VIN = VIH or VIL

IOL = 50µA

3.0

4.5

0.0

0.0

0.1

0.1

0.1

0.1

0.1

0.1

V

VIN = VIH or VIL

VIN = VIH or VIL

IOL = 4mA

IOL = 8mA

3.0

4.5

0.36

0.36

0.44

0.44

0.52

0.52

V

IIN

Maximum Input

Leakage Current

VIN = 5.5V or GND

0 to

5.5

±0.1

±1.0

±1.0

µA

ICC

Maximum Quiescent

Supply Current

VIN = VCC or GND

5.5

2.0

20

40

µA

ICCT

Quiescent Supply

Current

Input: VIN = 3.4V

5.5

1.35

1.50

1.65

mA

IOPD

Output Leakage

Current

VOUT = 5.5V

0.0

0.5

5.0

10

µA

TA = 25°C

TA = – 40 to 85°C

Symbol

Parameter

Test Conditions

Min

Typ

Max

Min

Max

Unit

tPLH,

tPHL

Maximum Propagation

Delay, A or B to Y

VCC = 3.3 ± 0.3V

CL = 15pF

CL = 50pF

5.5

8.0

7.9

11.4

1.0

1.0

9.5

13.0

ns

VCC = 5.0 ± 0.5V

CL = 15pF

CL = 50pF

3.8

5.3

5.5

7.5

1.0

1.0

6.5

8.5

Cin

Maximum Input Capacitance

4

10

10

pF

Typical @ 25

°C, VCC = 5.0V

CPD

Power Dissipation Capacitance (Note 1.)

22

pF

1. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.

no–load dynamic power consumption; PD = CPD  VCC2  fin + ICC  VCC.

Figure 1. Switching Waveforms

CL*

*Includes all probe and jig capacitance

TEST

POINT

DEVICE

UNDER

TEST

OUTPUT

Figure 2. Test Circuit

GND

tPHL

Y

A

tPLH

1.5V

1.5V

3V

VOL

VOH