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MC74VHC1G125DTT1 Datasheet(PDF) 3 Page - ON Semiconductor

Part # MC74VHC1G125DTT1
Description  Noninverting 3-State Buffer
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MC74VHC1G125DTT1 Datasheet(HTML) 3 Page - ON Semiconductor

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MC74VHC1G125
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3
DC ELECTRICAL CHARACTERISTICS
VCC
TA = 25°C
TA ≤ 85°C
−55
≤ TA ≤ 125°C
Symbol
Parameter
Test Conditions
VCC
(V)
Min
Typ
Max
Min
Max
Min
Max
Unit
VIH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
VIL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
VOH
Minimum High−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOH = −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
VIN = VIH or VIL
IOH = −4 mA
IOH = −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
VOL
Maximum Low−Level
Output Voltage
VIN = VIH or VIL
VIN = VIH or VIL
IOL = 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
V
IOZ
Maximum 3−State
Leakage Current
VIN = VIH or VIL
VOUT = VCC or GND
5.5
±0.25
$2.5
$2.5
mA
IIN
Maximum Input
Leakage Current
VIN = 5.5 V or GND
0 to
5.5
±0.1
±1.0
$1.0
mA
ICC
Maximum Quiescent
Supply Current
VIN = VCC or GND
5.5
1.0
20
40
mA
AC ELECTRICAL CHARACTERISTICS Cload = 50 pF, Input tr = tf = 3.0 ns
TA = 25°C
TA ≤ 85°C
−55
≤ TA ≤ 125°C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Min
Max
Min
Max
Unit
tPLH,
tPHL
Maximum Propagation
Delay,
InputAtoY
VCC = 3.3 ± 0.3 V CL = 15 pF
CL = 50 pF
4.5
6.4
8.0
11.5
9.5
13.0
12.0
16.0
ns
Input A to Y
(Figures 3 and 4)
VCC = 5.0 ± 0.5 V CL = 15 pF
CL = 50 pF
3.5
4.5
5.5
7.5
6.5
8.5
8.5
10.5
tPZL,
tPZH
Maximum Output
Enable Time,
Input OE to Y
VCC = 3.3 ± 0.3 V CL = 15 pF
RL = 1000 W
CL = 50 pF
4.5
6.4
8.0
11.5
9.5
13.0
11.5
15.0
ns
Input OE to Y
(Figures 4 and 5)
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
3.5
4.5
5.1
7.1
6.0
8.0
8.5
10.5
tPLZ,
tPHZ
Maximum Output
Disable Time,
Input OE to Y
VCC = 3.3 ± 0.3 V CL = 15 pF
RL 1000 W
CL = 50 pF
6.5
8.0
9.7
13.2
11.5
15.0
14.5
18.0
ns
Input OE to Y
(Figures 4 and 5)
VCC = 5.0 ± 0.5 V CL = 15 pF
RL = 1000 W
CL = 50 pF
4.8
7.0
6.8
8.8
8.0
10.0
10.0
12.0
CIN
Maximum Input
Capacitance
4.0
10
10
10
pF
COUT
Maximum 3−State Out-
put Capacitance (Output
in High Impedance
State)
6.0
pF
Typical @ 25
°C, VCC = 5.0 V
CPD
Power Dissipation Capacitance (Note 5)
8.0
pF
5. CPD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: ICC(OPR) = CPD  VCC  fin + ICC. CPD is used to determine the no−load dynamic
power consumption; PD = CPD  VCC2  fin + ICC  VCC.


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