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TPD1S514 Datasheet(PDF) 11 Page - Texas Instruments |
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TPD1S514 Datasheet(HTML) 11 Page - Texas Instruments |
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11 / 28 page  LDO POR + Oscillator TSD V REF V IN V OUT OVP EN Buffer EN V BUS_SYS V BUS_POWER V BUS_CON GND Surge Clamp BG Reference Q-Pump Gate Drive Digital Core - TPD1S514x www.ti.com SLVSCF6E – APRIL 2014 – REVISED OCTOBER 2015 8 Detailed Description 8.1 Overview The TPD1S514 Family provides single-chip ESD, surge, and over voltage protection solutions for portable USB Charging and Host interfaces. Each device offers over voltage protection at the VBUS_CON pin up to 30-V DC. The TPD1S514 Family offers an ESD and Precision Clamp for the VBUS_CON pin, thus eliminating the need for external TVS clamp circuits in the application. Each device has an internal oscillator and charge pump which controls turning ON the internal nFET switch. The internal oscillator controls the timers which enable the charge pump. If VBUS_CON is less than VOVP, the internal charge pump is enabled. After a 20 ms internal delay, the charge-pump starts-up, and turns ON the internal nFET switch through a soft start. If at any time VBUS_CON rises above VOVP, the nFET switch is turned OFF within 100 ns. The TPD1S514 Family of devices also have a VBUS_POWER pin which follows VBUS_CON up to 4.9 V at 3 mA (except for TPD1S514, which follows VBUS_CON up to 6.48 V, after which it is regulated to that voltage) to power the system from VBUS_CON. In the case where the system battery state cannot power the system, voltage from an external charger can be provided to power the system. VBUS_POWER is supplied by an always on LDO regulator supplied by VBUS_CON. VBUS_POWER output voltage remains regulated to 4.9 V (except for TPD1S514, which follows VBUS_CON up to 6.48 V, after which it is regulated to that voltage) at up to 30-V DC on VBUS_CON and during IEC 61000-4-5 surge events of up to 100 V open circuit voltage on VBUS_CON. 8.2 Functional Block Diagram 8.3 Feature Description 8.3.1 Over Voltage Protection on VBUS_CON up to 30 V DC When the VBUS_CON voltage rises above VOVP, the internal nFET switch is turned OFF, removing power from the system side. VBUS_CON can tolerate up to 30-V DC. The response to over voltage is very rapid, with the nFET switch turning off in less than 100 ns. When the VBUS_CON voltage returns back to below VOVP – VHYS_OVP, the nFET switch is turned ON again after an internal delay of tOVP_RECOV (tDELAY). This time delay ensures that the VBUS_CON supply has stabilized before turning the switch back on. After tOVP_RECOV, the TPD1S514 Family device turns on the nFET through a soft start. Once the OVP condition is cleared the nFET is turned completely ON. Copyright © 2014–2015, Texas Instruments Incorporated Submit Documentation Feedback 11 Product Folder Links: TPD1S514x |
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