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NE57810 Datasheet(PDF) 10 Page - NXP Semiconductors

Part # NE57810
Description  Advanced DDR memory termination power with external reference in
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

NE57810 Datasheet(HTML) 10 Page - NXP Semiconductors

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Philips Semiconductors
Product data
NE57810
Advanced DDR memory termination power
with external reference in
2003 Sep 12
10
Externally programmed VTT output voltage
The NE57810 allows use of an external reference voltage to set its
VTT output voltage. This pin (ExtRefIn pin 4) is used for applications
where the VTT voltage is not VDD divided by 2. This allows VTT
voltage and current to be drawn from a power supply bus that is not
the DDR RAM supply voltage. This may have some advantages
when you are attempting to better match the power being drawn
from the outputs emerging from main system power supply. This can
be seen in Figure 13.
The internal reference voltage is set by two matched 100 k
resistors connected in a resistor divider between the VDD and VSS
pins of the NE57810.
Setting the value of Vref or VTT can be done in two ways: by placing
an external resistor divider whose resistor values are less than 5 k
each or by connecting the output of an operational amplifier that is
outputting the reference voltage. If the external resistor divider is
used, place a 0.01
µF ceramic bypass capacitor between the
ExtRefIn pin (pin 4) and the VSS pin (pin 3). The accuracy of the
new reference voltage when the external resistor divider is used will
be about 0.5 percent PLUS the sum of the tolerances of the
resistors used in the divider.
Please note that when the NE57810 is operating in this fashion, the
power dissipation of the part may increase.
SL01679
VDD
VTT
ExtRefIn
RefOut
VSS
+VTT
NE57810
EXTERNAL REFERENCE IN
+VDD
GND
CIN
COUT
(LF)
COUT
(HF)
VREF
GND
Figure 13.
Externally programmed VTT.


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