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RD6.8ES Datasheet(PDF) 4 Page - EIC discrete Semiconductors |
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RD6.8ES Datasheet(HTML) 4 Page - EIC discrete Semiconductors |
4 / 5 page ELECTRICAL CHARACTERISTICS Rating at 25 °C ambient temperature unless otherwise specified Test Maximum Zener (2) Maximum Current Impedance Reverse Current IZT ZZT @ IZT IR at VR min. max. (mA) ( Ω) ( µA) (V) Suffix Zener Voltage (1) Type Vz (V) at IZT AB 20.23 22.61 AB1 20.23 21.08 AB2 20.76 21.65 AB3 21.22 22.09 AB4 21.68 22.61 AB 22.26 24.81 AB1 22.26 23.12 AB2 22.75 23.73 AB3 23.29 24.27 AB4 23.81 24.81 AB 24.26 27.64 AB1 24.26 25.52 AB2 24.97 26.26 AB3 25.63 26.95 AB4 26.29 27.64 AB 26.99 30.51 AB1 26.99 28.39 AB2 27.70 29.13 AB3 28.36 29.82 AB4 29.02 30.51 AB 29.68 33.11 AB1 29.68 31.22 AB2 30.32 31.88 AB3 30.90 32.50 AB4 31.49 33.11 AB 32.14 35.77 AB1 32.14 33.79 AB2 32.79 34.49 AB3 33.40 35.13 AB4 34.01 35.77 AB 34.68 38.52 AB1 34.68 36.47 AB2 35.36 37.19 AB3 36.00 37.85 AB4 36.63 38.52 Notes : (1) Tested with pulse (40 ms ) (2) ZZ is measured at IZ by given a very small A.C. current signal. (3) Suffix AB is Suffix AB1, AB2, AB3, or AB4 Page 4 of 5 Rev. 07 : June 10, 2014 30 0.2 25 5 75 RD39ES 5 85 RD36ES 65 0.2 27 0.2 RD33ES 5 0.2 23 RD30ES 5 55 17 0.2 21 0.2 19 0.2 RD22ES RD27ES 5 45 RD24ES 5 30 5 30 www.eicsemi.com |
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