SI4511DY-T1 datasheet(4/8 Pages) VISHAY

Part #	SI4511DY-T1

Description	N- and P-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4511DY

Vishay Siliconix

www.vishay.com

4

Document Number: 72223

S-41496—Rev. B, 09-Aug-04

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

N−CHANNEL

VGS − Gate-to-Source Voltage (V)

−0.8

−0.6

−0.4

−0.2

−0.0

0.2

0.4

−50

−25

0

25

50

75

100

125

150

ID = 250 mA

1.0

1.2

0.00

0.01

0.02

0.03

0.04

0.05

0

1234

5

1

10

40

ID = 9.6 A

0.00

0.2

0.4

0.6

0.8

TJ = 25_C

TJ = 150_C

Threshold Voltage

TJ − Temperature (_C)

Source-Drain Diode Forward Voltage

On-Resistance vs. Gate-to-Source Voltage

VSD − Source-to-Drain Voltage (V)

0

20

30

10

15

Single Pulse Power

Time (sec)

25

1

100

600

10

10−1

10−2

5

ID = 3 A

Safe Operating Area

VDS − Drain-to-Source Voltage (V)

100

1

0.1

1

10

100

0.01

10

TC = 25_C

Single Pulse

P(t) = 10

dc

0.1

IDM Limited

ID(on)

Limited

rDS(on) Limited

BVDSS Limited

P(t) = 1

P(t) = 0.1

P(t) = 0.01

P(t) = 0.001

P(t) = 0.0001

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