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TPS2350DG4 Datasheet(PDF) 3 Page - Texas Instruments

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Part # TPS2350DG4
Description  Hot Swap Power Manager for Redundant ??8-V Supplies
Download  27 Pages
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS2350DG4 Datasheet(HTML) 3 Page - Texas Instruments

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TPS2350
www.ti.com
SLUS574D – JULY 2003 – REVISED OCTOBER 2013
THERMAL INFORMATION
TPS2350
THERMAL METRIC(1)
UNITS
D (14 PINS)
PW (14 PINS)
θJA
Junction-to-ambient thermal resistance
95.9
120.8
θJB
Junction-to-board thermal resistance
51.5
62.8
θJCtop
Junction-to-case (top) thermal resistance
50.7
n/a
°C/W
ψJT
Junction-to-top characterization parameter
8.3
1
ψJB
Junction-to-board characterization parameter
51.1
56.5
(1)
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
ELECTRICAL CHARACTERISTICS
–VINA = –48 V, –VINB = 0 V, UV = 2.5 V, OV = 0.5 V, SENSE = 0 V, RAMP = 0 V, SOURCE = more negative of –VINA and
–VINB, all outputs unloaded, TA = –40°C to 85°C (unless otherwise noted)
(1) (2)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Input Supply
ICC1A
Supply current
–VINA = –48 V, –VINB = 0 V
1000
1500
ICC2A
Supply current
–VINA = –80 V, –VINB = 0 V
2000
µA
ICC1B
Supply current
–VINB = –48 V, –VINA = 0 V
1000
1500
ICC2B
Supply current
–VINB = –80 V, –VINA = 0 V
2000
VUVLO_I
Internal UVLO threshold voltage
To GAT pull up
–11.8
–10
–8.0
V
VHYST
Internal UVLO hysteresis voltage
50
240
500
mV
Overvoltage and Undervoltage Inputs (OV and UV)
To GAT pull up, 25°C
1.391
1.400
1.409
UV threshold voltage, UV rising, to
VTHUV
To GAT pull up, 0 to 70°C
1.387
1.400
1.413
V
–VINA
To GAT pull up, –40 to 85°C
1.384
1.400
1.419
IHYSUV
UV hysteresis
UV = –45.5 V
–11
–10
–9
µA
IILUV
UV low-level input current
UV = –47 V
–1
1
OV threshold voltage, OV rising, to
VTHOV
To GAT pull up
1.376
1.400
1.426
V
–VINA
IHYSOV
OV hysteresis
OV =
−45.5 V
–11.1
–10
–8.6
µA
IILOV
OV low-level input current
OV = –47 V
–1
1
µA
Linear Current Amplifier (LCA)
VOH
High level output, GAT–SOURCE
SENSE = SOURCE
11
14
17
V
SENSE – SOURCE = 80 mV,
ISINK_f
GAT sink current in fault
30
75
GAT = –43 V, FLTTIME = 5 V
mA
SENSE – SOURCE = 80 mV,
ISINK_l
GAT sink current in linear mode
5
10
GAT = –43 V, FLTTIME = 2 V
IIN
SENSE input current
0.0 V < SENSE – SOURCE < 0.2 V
–1
1
µA
Reference clamp voltage, SENSE –
VREF_K
RAMP – SOURCE = 6 V
34
42
50
SOURCE
mV
Input offset voltage, SENSE –
VIO
RAMP – SOURCE = 0 V
–7
9
SOURCE
Ramp Generator
ISRC1
RAMP source current, slow turn-on rate RAMP
− SOURCE = 0.25 V
–800
–550
–300
nA
ISRC2
RAMP source current, normal rate
RAMP – SOURCE = 1 V and 3 V
–11.3
–10
–8.5
μA
VOL
Low-level output voltage
UV = SOURCE
5
mV
AV
Voltage gain, relative to SENSE
0 V < RAMP – SOURCE < 5 V
9.5
10
10.7
mV/V
(1)
All voltages are with respect to RTN unless otherwise stated.
(2)
Currents are positive into and negative out of the specified terminal.
Copyright © 2003–2013, Texas Instruments Incorporated
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