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TPS2013PWLE Datasheet(PDF) 5 Page - Texas Instruments |
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TPS2013PWLE Datasheet(HTML) 5 Page - Texas Instruments |
5 / 21 page TPS2010, TPS2011, TPS2012, TPS2013 POWER-DISTRIBUTION SLVS097A – DECEMBER 1994 – REVISED AUGUST 1995 5 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 recommended operating conditions MIN MAX UNIT Input voltage, VI(IN) 2.7 5.5 V Input voltage, VI at EN 0 5.5 V TPS2010 0 0.2 Continuous output current IO TPS2011 0 0.6 A Continuous output current, IO TPS2012 0 1 A TPS2013 0 1.5 Operating virtual junction temperature, TJ –40 125 °C electrical characteristics over recommended operating junction temperature range, VI(IN) = 5.5 V, IO = rated current, EN = 0 V (unless otherwise noted) power switch PARAMETER TEST CONDITIONS† TPS2010, TPS2011 TPS2012, TPS2013 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT VI(IN) = 5.5 V, TJ = 25°C 75 95 On state resistance VI(IN) = 4.5 V, TJ = 25°C 80 110 m Ω On-state resistance VI(IN) = 3 V, TJ = 25°C 120 175 m Ω VI(IN) = 2.7 V, TJ = 25°C 140 215 Output leakage current EN VI(IN) TJ = 25°C 0.001 1 µA Output leakage current EN = VI(IN) –40 °C ≤ TJ ≤ 125°C 10 µA t Output rise time VI(IN) = 5.5 V, TJ = 25°C, CL = 1 µF 4 ms tr Output rise time VI(IN) = 2.7 V, TJ = 25°C, CL = 1 µF 3.8 ms tf Output fall time VI(IN) = 5.5 V, TJ = 25°C, CL = 1 µF 3.9 ms tf Output fall time VI(IN) = 2.7 V, TJ = 25°C, CL = 1 µF 3.5 ms † Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. enable input (EN) PARAMETER TEST CONDITIONS TPS2010, TPS2011 TPS2012, TPS2013 UNIT PARAMETER TEST CONDITIONS MIN TYP MAX UNIT High-level input voltage 2.7 V ≤ VI(IN) ≤ 5.5 V 2 V Low level input voltage 4.5 V ≤ VI(IN) ≤ 5.5 V 0.8 V Low-level input voltage 2.7 V ≤ VI(IN) < 4.5 V 0.4 V Input current EN = 0 V or EN = VI(IN) – 0.5 0.5 µA tPLH Propagation (delay) time, low-to-high-level output CL = 1 µF 20 ms tPHL Propagation (delay) time, high-to-low-level output CL = 1 µF 40 ms current limit PARAMETER TEST CONDITIONS† TPS2010, TPS2011 TPS2012, TPS2013 UNIT TEST CONDITIONS MIN TYP MAX TJ =25°C TPS2010 0.22 0.4 0.6 Short circuit current TJ = 25 C, VI(IN) = 5.5 V, TPS2011 0.66 1.2 1.8 A Short-circuit current I(IN) OUT connected to GND, device enabled into short circuit TPS2012 1.1 2 3 A enabled into short circuit TPS2013 1.65 2.6 4.5 † Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account separately. |
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