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TPS2311IPWR Datasheet(PDF) 1 Page - Texas Instruments |
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TPS2311IPWR Datasheet(HTML) 1 Page - Texas Instruments |
1 / 27 page 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 GATE1 GATE2 DGND TIMER VREG VSENSE2 VSENSE1 AGND ISENSE2 ISENSE1 DISCH1 DISCH2 ENABLE PWRGD1 FAULT ISET1 ISET2 PWRGD2 IN2 IN1 PW PACKAGE (TOP VIEW) typical application NOTE: Terminal 18 is active high on TPS2311. VREG IN1 ISET1 ISENSE1 GATE1 DISCH1 VSENSE1 PWRGD1 TIMER VSENSE2 DISCH2 GATE2 ISENSE2 ISET2 IN2 DGND AGND V2 V1 3 V − 5.5 V 3 V − 13 V PWRGD2 TPS2310 + VO1 VO2 ENABLE FAULT + TPS2310 TPS2311 www.ti.com SLVS275H – FEBRUARY 2000 – REVISED JULY 2013 DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT CIRCUIT BREAKER AND POWER-GOOD REPORTING Check for Samples: TPS2310, TPS2311 1 FEATURES • Dual-Channel High-Side MOSFET Drivers • IN1: 3 V to 13 V; IN2: 3 V to 5.5 V • Output dV/dt Control Limits Inrush Current • Circuit-Breaker With Programmable Overcurrent Threshold and Transient Timer • Power-Good Reporting With Transient Filter • CMOS- and TTL-Compatible Enable Input • Low, 5- μA Standby Supply Current .(Max) • Available in 20-Pin TSSOP Package • –40°C to 85°C Ambient Temperature Range • Electrostatic Discharge Protection APPLICATIONS • Hot-Swap/Plug/Dock Power Management • Hot-Plug PCI, Device Bay • Electronic Circuit Breaker DESCRIPTION The TPS2310 and TPS2311 are dual-channel hot- swap controllers that use external N-channel MOSFETs as high-side switches in power applications. Features of these devices, such as overcurrent protection (OCP), inrush current control, output-power status reporting, and the ability to discriminate between load transients and faults, are critical requirements for hot-swap applications. The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during power-state transitions, to disregard transients for a programmable period. 1 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. PRODUCTION DATA information is current as of publication date. Copyright © 2000–2013, Texas Instruments Incorporated Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. |
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