1

2

3

4

5

6

7

8

9

10

20

19

18

17

16

15

14

13

12

11

GATE1

GATE2

DGND

TIMER

VREG

VSENSE2

VSENSE1

AGND

ISENSE2

ISENSE1

DISCH1

DISCH2

ENABLE

PWRGD1

FAULT

ISET1

ISET2

PWRGD2

IN2

IN1

PW PACKAGE

(TOP VIEW)

typical application

NOTE: Terminal 18 is active high on TPS2311.

VREG

IN1

ISET1

ISENSE1 GATE1

DISCH1

VSENSE1

PWRGD1

TIMER

VSENSE2

DISCH2

GATE2

ISENSE2

ISET2

IN2

DGND

AGND

V2

V1

3 V − 5.5 V

3 V − 13 V

PWRGD2

TPS2310

+

ENABLE

FAULT

+

TPS2310

TPS2311

www.ti.com

SLVS275H – FEBRUARY 2000 – REVISED JULY 2013

DUAL HOT-SWAP POWER CONTROLLERS WITH INTERDEPENDENT

CIRCUIT BREAKER AND POWER-GOOD REPORTING

Check for Samples: TPS2310, TPS2311

1

FEATURES

•

Dual-Channel High-Side MOSFET Drivers

•

IN1: 3 V to 13 V; IN2: 3 V to 5.5 V

•

Output dV/dt Control Limits Inrush Current

•

Circuit-Breaker With Programmable

Overcurrent Threshold and Transient Timer

•

Power-Good Reporting With Transient Filter

•

CMOS- and TTL-Compatible Enable Input

•

Low, 5-

μA Standby Supply Current .(Max)

•

Available in 20-Pin TSSOP Package

•

–40°C to 85°C Ambient Temperature Range

•

Electrostatic Discharge Protection

APPLICATIONS

•

Hot-Swap/Plug/Dock Power Management

•

Hot-Plug PCI, Device Bay

•

Electronic Circuit Breaker

DESCRIPTION

The TPS2310 and TPS2311 are dual-channel hot-

swap

controllers

that

use

external

N-channel

MOSFETs

as

high-side

switches

in

power

applications. Features of these devices, such as

overcurrent protection (OCP), inrush current control,

output-power status reporting, and the ability to

discriminate between load transients and faults, are

critical requirements for hot-swap applications.

The TPS2310/11 devices incorporate undervoltage lockout (UVLO) and power-good (PG) reporting to ensure the

device is off at start-up and confirm the status of the output voltage rails during operation. Each internal charge

pump, capable of driving multiple MOSFETs, provides enough gate-drive voltage to fully enhance the N-channel

MOSFETs. The charge pumps control both the rise times and fall times (dv/dt) of the MOSFETs, reducing power

transients during power up/down. The circuit-breaker functionality combines the ability to sense overcurrent

conditions with a timer function; this allows designs such as DSPs, that may have high peak currents during

power-state transitions, to disregard transients for a programmable period.

1

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

PRODUCTION DATA information is current as of publication date.

Copyright © 2000–2013, Texas Instruments Incorporated

Products conform to specifications per the terms of the Texas

Instruments standard warranty. Production processing does not

necessarily include testing of all parameters.