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FS6X1220RTTU Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FS6X1220RTTU Datasheet(HTML) 4 Page - Fairchild Semiconductor |
4 / 16 page FS6X1220R 4 Electrical Characteristics (SenseFET part) (Ta=25 °C unless otherwise specified) Note: 1. Pulse test : Pulse width ≤ 300µS, duty ≤ 2% Parameter Symbol Condition Min. Typ. Max. Unit Drain Source Breakdown Voltage BVDSS VGS=0V, ID=250µA 200 - - V Zero Gate Voltage Drain Current IDSS VDS=200V, VGS=0V - - 1 µA VDS=160V VGS=0V, TC=125°C -- 10 µA Static Drain Source On Resistance (1) RDS(ON) VGS=10V, ID=4.1A - 0.24 0.30 Ω Forward Transconductance gfs VDS=40V, ID=4.1A - 7.1 - mho Input Capacitance Ciss VGS=0V, VDS=25V, f = 1MHz - 700 910 pF Output Capacitance Coss - 125 160 Reverse Transfer Capacitance Crss - 18 25 Turn On Delay Time td(on) VDD=100V, ID=11.6A (MOSFET switching time is essentially independent of operating temperature) -13 35 ns Rise Time tr - 120 250 Turn Off Delay Time td(off) - 30 70 Fall Time tf - 55 120 Total Gate Charge (Gate-Source+Gate-Drain) Qg VGS=10V, ID=11.6A, VDS=160V (MOSFET switching time is essentially independent of operating temperature) -18 23 nC Gate-Source Charge Qgs - 5 - Gate-Drain (Miller) Charge Qgd - 8 - |
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