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BY448Z Datasheet(PDF) 1 Page - Diode Semiconductor Korea |
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BY448Z Datasheet(HTML) 1 Page - Diode Semiconductor Korea |
1 / 2 page FEATURES Low cos t Diffus ed junction Low leakage Low forward voltage drop High current capability and s im ilar s olvents MECHANICAL DATA Cas e:JEDEC DO-27,m olded plas tic Term inals : Axial lead ,s olderable per MIL- STD-202,Method 208 Polarity: Color band denotes cathode Weight: 0.041 ounces ,1.15 gram s Mounting pos ition: Any MAXIMUM RAT INGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phas e,half wave,60 Hz,res is tive or inductive load. For capacitive load,derate by 20%. UNITS Maximum recurrent peak reverse voltage VRRM V Maximum RMS voltage VRMS V Maximum DC blocking voltage VDC V Maximum average f orw ard rectif ied current 9.5mm lead length, @T A=75 Peak f orw ard surge current 8.3ms single half -sine-w ave superimposed on rated load @T J =125 Maximum instantaneous f orw ard voltage @ 3.0 A VF V Maximum reverse current @T A=25 at rated DC blocking voltage @T A=100 Maximum reverse recovery time (Note1) trr ns Typical junction capacitance (Note2) CJ pF Typical thermal resistance (Note3) RθJA /W Operating junction temperature range TJ Storage temperature range TSTG NOTE: 1. Measured with I F =0.5A, I R=1A, I rr=0. 25A. 2. Measured at 1.0MH Z and applied rev ers e v olt age of 4. 0V D C . 3. Therm al res istanc e f rom junction to am bient. IFSM 1.6 30.0 BY448 1500 1050 1500 FAST RECOVERY RECT IFIER IF(AV) The plas tic m aterial carries U/L recognition 94V-0 - 55---- +150 -55---- +150 1000 10.0 100.0 32 22 IR BY448(Z) DO - 27 Eas ily cleaned with Freon,Alcohol,Is opropanol A A VOLT AGE RANGE: 1500 V CURRENT: 3.0 A 3.0 A Dimensions in millimeters www.diode.kr Diode Semiconductor Korea |
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