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DL4749 Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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DL4749 Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
2 / 2 page Nominal zener voltage 1) Test current Vz@IZT IZT IZT@ZZT ZZK@IZK (V) (mA) (Ω)(Ω) DL 4728 3.3 76 10 400 DL 4729 3.6 69 10 400 DL 4730 3.9 64 9 400 DL 4731 4.3 58 9 400 DL 4732 4.7 53 8 500 DL 4733 5.1 49 7 550 DL 4734 5.6 45 5 600 DL 4735 6.2 41 2 700 DL 4736 6.8 37 3.5 700 DL 4737 7.5 34 4.0 700 DL 4738 8.2 31 4.5 700 DL 4739 9.1 28 5.0 700 DL 4740 10 25 7 700 DL 4741 11 23 8 700 DL 4742 12 21 9 700 DL 4743 13 19 10 700 DL 4744 15 17 14 700 DL 4745 16 15.5 16 700 DL 4746 18 14 20 750 DL 4747 20 12.5 22 750 DL 4748 22 11.5 23 750 DL 4749 24 10.5 25 750 DL 4750 27 9.5 35 750 DL 4751 30 8.5 40 1000 DL 4752 33 7.5 45 1000 DL 4753 36 7.0 50 1000 DL 4754 39 6.5 60 1000 DL 4755 43 6.0 70 1500 DL 4756 47 5.5 80 1500 DL 4757 51 5.0 95 1500 DL 4758 56 4.5 110 2000 DL 4759 62 4.0 125 2000 DL 4760 68 3.7 150 2000 DL 4761 75 3.3 175 2000 DL 4762 82 3.0 200 3000 DL 4763 91 2.8 250 3000 DL 4764 100 2.5 350 3000 45 41 27.4 125 22.8 170 1)Based on dc_measurem ent at theral equilibrium while m aitaining the lead temperature (T L) at 30 +1 ,9.5mm (3/8")f rom the Diode body . 2)Valid prov ided that electrodes at a distance of 10 m m f orm case kept at am bient temperature. *)Additionnal measurem ent of v oltage gruup 9v 1 to 75 at 95% V ZMIN 35nA at T J25 0.5 1.0 1.0 1.0 1.0 0.5 0.5 IZK (m A) 1.0 100 515.2 5 5 57 0.25 5 13.7 250 50 0.25 5 12.2 285 61 0.25 5 9.9 344 69 0.25 5 304 11.4 83 59.1 380 76 58.4 414 29.7 115 95 19 32.7 110 35.8 0.25 5 0.25 5 0.25 5 5 25.1 135 150 225 16.7 205 20.6 18.2 730 660 970 4 890 2 3 1 810 1260 1190 1070 1 1 1 1380 1 1.0 1.0 1.0 100 50 10 10 10 10 10 10 10 10 38 34 30 10 605 190 1 550 500 454 27 25 23 22 121 110 100 91 234 133 217 193 178 462 146 ELECTRICAL CHARACTERISTICS (TA=25 ) Type Max surge current 8.3ms Maximum regulator current 2) I ZM @Tamb =50 I R@Tamb =25 1.0 0.25 0.25 0.25 0.25 0.25 0.25 0.25 10 252 Maximum dynamic impedance IR (μA) @VR (mA) (mA) Maximum reverse leakage current 276 (V) 0.25 0.25 5 0.25 5 5 6 7 7.6 5 18 0.25 5 42.6 80 16 0.25 5 38.8 90 14 0.25 5 51.7 65 13 0.25 5 47.1 70 12 0.25 5 62.2 55 11 0.25 5 56.0 60 0.25 5 69.2 50 0.25 5 7 9.0 45 10 9 www.diode.kr Diode Semiconductor Korea |
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