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OPA692IDBV Datasheet(PDF) 3 Page - Texas Instruments |
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OPA692IDBV Datasheet(HTML) 3 Page - Texas Instruments |
3 / 30 page OPA692 3 SBOS236E www.ti.com ELECTRICAL CHARACTERISTICS: V S = ±5V Boldface limits are tested at +25 °C. G = +2 (–IN grounded) and RL = 100Ω (see Figure 1 for AC performance only), unless otherwise noted. OPA692ID, IDBV TYP MIN/MAX OVER TEMPERATURE 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C +85 °C UNITS MAX LEVEL(2 ) AC PERFORMANCE (see Figure 1) Small-Signal Bandwidth (VO < 0.5VPP) G = +1 280 MHz typ C G = +2 225 185 180 170 MHz min B G = –1 220 MHz typ C Bandwidth for 0.1dB Gain Flatness G = +2, VO < 0.5VPP 120 40 35 30 MHz min B Peaking at a Gain of +1 VO < 0.5VPP 0.2 1 1.5 2 dB max B Large-Signal Bandwidth G = +2, VO = 5VPP 220 MHz typ C Slew Rate G = +2, 4V Step 2000 1400 1375 1350 V/ µsmin B Rise-and-Fall Time G = +2, VO = 0.5V Step 1.6 ns typ C G = +2, VO = 5V Step 1.9 ns typ C Settling Time to 0.02% G = +2, VO = 2V Step 12 ns typ C 0.1% G = +2, VO = 2V Step 8 ns typ C Harmonic Distortion G = +2, f = 5MHz, VO = 2VPP 2nd-Harmonic RL = 100Ω –69 –62 –59 –57 dBc max B RL ≥ 500Ω –79 –70 –67 –65 dBc max B 3rd-Harmonic RL = 100Ω –76 –72 –70 –68 dBc max B RL ≥ 500Ω –94 –87 –82 –78 dBc max B Input Voltage Noise f > 1MHz 1.7 2.5 2.9 3.1 nV/ √Hz max B Noninverting Input Current Noise f > 1MHz 12 14 15 15 pA/ √Hz max B Inverting Input Current Noise f > 1MHz 15 17 18 19 pA/ √Hz max B Differential Gain NTSC, RL = 150Ω 0.07 % typ C NTSC, RL = 37.5Ω 0.17 % typ C Differential Phase NTSC, RL = 150Ω 0.02 deg typ C NTSC, RL = 37.5Ω 0.07 deg typ C DC PERFORMANCE(3) Gain Error G = +1 ±0.2 % typ C G = +2 ±0.3 ±1.5 ±1.6 ±1.7 % max A G = –1 ±0.2 ±1.5 ±1.6 ±1.7 % max B Internal RF and RG Maximum 402 457 462 464 Ω max A Minimum 402 347 342 340 Ω min A Average Drift 0.13 0.13 0.13 %/C ° max B Input Offset Voltage VCM = 0V ±0.5 ±2.5 ±3.2 ±3.9 mV max A Average Offset Voltage Drift VCM = 0V ±12 ±20 µV/°Cmax B Noninverting Input Bias Current VCM = 0V +15 +35 +43 +45 µAmax A Average Noninverting Input Bias Current Drift VCM = 0V –300 –300 nA/ °Cmax B Inverting Input Bias Current VCM = 0V ±5 ±25 ±30 ±40 µAmax A Average Inverting Input Bias Current Drift VCM = 0V ±90 ±200 nA °Cmax B INPUT Common-Mode Input Range ±3.5 ±3.4 ±3.3 ±3.2 V min B Noninverting Input Impedance 100 || 2 k Ω || pF typ C OUTPUT Voltage Output Swing No Load ±4.0 ±3.8 ±3.7 ±3.6 V min A 100 Ω Load ±3.9 ±3.7 ±3.6 ±3.3 V min A Current Output, Sourcing +190 +160 +140 +100 mA min A Sinking –190 –160 –140 –100 mA min A Short-Circuit Current VO = 0 ±250 mA typ C Closed-Loop Output Impedance G = +2, f = 100kHz 0.12 Ω typ C NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25 °C specifications. Junction temperature = ambient temperature +10°C at high temperature limit specifications. (2) Test Levels: (A) 100% tested at +25 °C. Over-temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value only for information. (3) Current is considered positive out-of-node. VCM is the input common-mode voltage. |
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