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TPS3838K33DBVR Datasheet(PDF) 2 Page - Texas Instruments

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Part # TPS3838K33DBVR
Description  NanoPower Supervisory Circuits
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Manufacturer  TI1 [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI1 - Texas Instruments

TPS3838K33DBVR Datasheet(HTML) 2 Page - Texas Instruments

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TPS3836
TPS3837
TPS3838
SLVS292E – JUNE 2000 – REVISED OCTOBER 2010
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
Table 1. ORDERING INFORMATION(1)
PRODUCT
NOMINAL SUPPLY VOLTAGE
THRESHOLD VOLTAGE (VIT)
(2)
TPS383xE18
1.8 V
1.71 V
TPS383xJ25
2.5 V
2.25 V
TPS383xH30
3.0 V
2.79 V
TPS383xL30
3.0 V
2.64 V
TPS383xK33
3.3 V
2.93 V
(1)
For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
web site at www.ti.com.
(2)
Custom threshold voltages are available. Minimum order quantities apply. Contact factory for details and availability.
ABSOLUTE MAXIMUM RATINGS
(1)
Over operating free-air temperature range, unless otherwise noted.
TPS383xx
UNIT
Supply voltage, VDD
(2)
7
V
All other pins(2) (3)
–0.3 to 7
V
Maximum low output current, IOL
5
mA
Maximum high output current, IOH
–5
mA
Input clamp current, IIK (VI < 0 or VI > VDD)
±10
mA
Output clamp current, IOK (VO < 0 or VO > VDD)
±10
mA
Continuous total power dissipation
See Dissipation Ratings Table
Operating temperature range, TA
–40 to +85
°C
Storage temperature range, TSTG
–65 to +150
°C
Soldering temperature
+260
°C
(1)
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2)
All voltage values are with respect to GND.
(3)
If RESET or RESET are pulled above VDD, the internal ESD structure will present an effective 1.5 kΩ resistor between these pins,
causing leakage current to flow into the RESET or RESET pin.
DISSIPATION RATINGS
TA < +25°C
DERATING FACTOR
TA = +70°C
TA = +85°C
PACKAGE
POWER RATING
ABOVE TA = +25°C
POWER RATING
POWER RATING
DBV
437 mW
3.5 mW/°C
280 mW
227 mW
DRV Low-K(1)
715 mW
7.1 mW/°C
395 mW
285 mW
DRV High-K(2)
1540 mW
15.4 mW/°C
845 mW
615 mW
(1)
The JEDEC low-K (1s) board used to derive this data was a 3in x 3in, two-layer board with 2-ounce copper traces on top of the board.
(2)
The JEDEC high-K (2s2p) board used to derive this data was a 3in x 3in, multilayer board with 1-ounce internal power and ground
planes and 2-ounce copper traces on the top and bottom of the board.
2
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Copyright © 2000–2010, Texas Instruments Incorporated


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