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EF8A60F Datasheet(PDF) 2 Page - Formosa MS |
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EF8A60F Datasheet(HTML) 2 Page - Formosa MS |
2 / 6 page Page 2 High current capability Features . Low reverse leakage current High surge capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. • . • • • • • • • Reverse recovery time less than 25ns Low forward drop down voltage. High reliability. • Suffix "-H" indicates Halogen free parts, ex. ΕF8A05F-H. Formosa MS 8.0A Glass Passivated Effciency Fast Rectifiers-50-600V Document ID Issued Date Revised Date Revision Page. http://www.formosams.com/ TEL:886-2-22696661 FAX:886-2-22696141 EF8A05F THRU EF8A60F Package outline Dimensions in inches and (millimeters) ITO-220AC 0.406(10.3) 0.381(9.7) 0.134(3.4) 0.118(3.0) 0.606(15.4) 0.583(14.8) 0.272(6.9) 0.248(6.3) 1 2 0.161(4.1)MAX 0.548(13.9) 0.512(13.0) 0.189(4.8) 0.165(4.2) 0.035(0.9) 0.011(0.3) 0.110(2.8) 0.091(2.3) 0.130(3.3) 0.099(2.5) 0.032(0.8)MAX PIN2 PIN1 Effciency Fast Rectifiers Mechanical data Epoxy : UL94-V0 rated flame retardant • • • • • • Case : JEDEC ITO-220AC molded plastic body over passivated chip Lead : Axial leads, solderable per MIL-STD-202, Method 208 guranteed Polarity: Mounting Position : Any Weight : Approximated 1.70 gram As marked Maximum ratings (AT T =25 A oC unless otherwise noted) Maximum repetitive peak reverse voltage Maximum RMS voltage Peak forward surge current 8.3ms single half sine-wave(JEDEC method) Maximum DC blocking voltage Maximum average forward rectified current Operating junction temperature range Storage temperature range Maximum forward voltage at IF=8.0A Maximum DC reverse current at TJ =25 C at TJ =125 C ° ° at rated DC blocking voltage Electrical characteristics (AT T =25 A oC unless otherwise noted) Thermal characteristics Maximum reverse recovery time (Note 2) Typical thermal resistance junction to case PARAMETER PARAMETER PARAMETER SYMBOLS SYMBOLS SYMBOLS VDC VRRM IFSM VRMS TSTG IO TJ VF IR RθJC trr EF8A05F 50 35 50 EF8A10F 0.98 100 70 100 EF8A20F -55 to +150 -65 to +175 5.0 200 25 200 140 200 8.0 100 2.5 EF8A40F 400 280 400 1.30 EF8A60F 1.75 600 420 600 UNIT °C °C UNIT uA uA UNIT °C/W ns V V V A A V Typical diode junction capacitance (Note 1) CJ 50 pF EF8A05F EF8A10F EF8A20F EF8A40F EF8A60F EF8A05F EF8A10F EF8A20F EF8A40F EF8A60F Note 1: Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Note 2: Measure at 1 MHz and applied reverse voltage of 4.0 V D.C. DS-222535 2011/02/22 2015/07/06 B 6 |
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