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EF8A60F Datasheet(PDF) 2 Page - Formosa MS

Part # EF8A60F
Description  Effciency Fast Rectifiers
Download  6 Pages
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Manufacturer  FORMOSA [Formosa MS]
Direct Link  http://www.formosams.com
Logo FORMOSA - Formosa MS

EF8A60F Datasheet(HTML) 2 Page - Formosa MS

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High current capability
Features
.
Low reverse leakage current
High surge capability.
Glass passivated chip junction.
Lead-free parts meet RoHS requirments.
.
Reverse recovery time less than 25ns
Low forward drop down voltage.
High reliability.
Suffix "-H" indicates Halogen free parts, ex. ΕF8A05F-H.
Formosa MS
8.0A Glass Passivated
Effciency Fast Rectifiers-50-600V
Document ID
Issued Date
Revised Date
Revision
Page.
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
EF8A05F THRU EF8A60F
Package outline
Dimensions in inches and (millimeters)
ITO-220AC
0.406(10.3)
0.381(9.7)
0.134(3.4)
0.118(3.0)
0.606(15.4)
0.583(14.8)
0.272(6.9)
0.248(6.3)
1
2
0.161(4.1)MAX
0.548(13.9)
0.512(13.0)
0.189(4.8)
0.165(4.2)
0.035(0.9)
0.011(0.3)
0.110(2.8)
0.091(2.3)
0.130(3.3)
0.099(2.5)
0.032(0.8)MAX
PIN2
PIN1
Effciency Fast Rectifiers
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : JEDEC ITO-220AC molded plastic body over
passivated chip
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity:
Mounting Position : Any
Weight : Approximated 1.70 gram
As marked
Maximum ratings (AT T =25
A
oC unless otherwise noted)
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Peak forward surge current 8.3ms
single half sine-wave(JEDEC method)
Maximum DC blocking voltage
Maximum average forward rectified current
Operating junction temperature range
Storage temperature range
Maximum forward voltage at IF=8.0A
Maximum DC reverse current
at TJ =25 C
at TJ =125 C
°
°
at rated DC blocking voltage
Electrical characteristics (AT T =25
A
oC unless otherwise noted)
Thermal characteristics
Maximum reverse recovery time (Note 2)
Typical thermal resistance junction to case
PARAMETER
PARAMETER
PARAMETER
SYMBOLS
SYMBOLS
SYMBOLS
VDC
VRRM
IFSM
VRMS
TSTG
IO
TJ
VF
IR
RθJC
trr
EF8A05F
50
35
50
EF8A10F
0.98
100
70
100
EF8A20F
-55 to +150
-65 to +175
5.0
200
25
200
140
200
8.0
100
2.5
EF8A40F
400
280
400
1.30
EF8A60F
1.75
600
420
600
UNIT
°C
°C
UNIT
uA
uA
UNIT
°C/W
ns
V
V
V
A
A
V
Typical diode junction capacitance (Note 1)
CJ
50
pF
EF8A05F
EF8A10F
EF8A20F
EF8A40F
EF8A60F
EF8A05F
EF8A10F
EF8A20F
EF8A40F
EF8A60F
Note 1:
Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Note 2:
Measure at 1 MHz and applied reverse voltage of 4.0 V D.C.
DS-222535
2011/02/22
2015/07/06
B
6


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