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OPA699IDR Datasheet(PDF) 5 Page - Texas Instruments |
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OPA699IDR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 31 page OPA699 5 SBOS261D www.ti.com AC PERFORMANCE (see Figure 2) Small Signal Bandwidth (VO < 0.5VPP) G = +6 234 200 190 180 MHz min B G = +12 83 MHz typ C G = –6 242 MHz typ C Gain Bandwidth Product (G ≥ +20) VO < 0.5VPP 880 700 650 600 MHz min B Gain Peaking VO < 0.5VPP, G = +4 8 dB typ C 0.1dB Gain Flatness Bandwidth VO < 0.5VPP, G = +6 30 MHz typ C Large-Signal Bandwidth VO = 2VPP 250 200 190 180 MHz min B Step Response Slew Rate 2V Step 1050 850 800 700 V/ µsmin B Rise-and-Fall Time 0.5V Step 1.75 1.8 1.9 2.1 ns max B Settling Time: 0.05% 2V Step 8 ns typ C Spurious-Free Dynamic Range, Even f = 5MHz, VO = 2VPP 64 61 60 58 dB min B Odd f = 5MHz, VO = 2VPP 70 69 67 65 dB min B Input Noise Voltage Noise Density f ≥ 1MHz 4.2 4.6 5.2 5.6 nV/ √Hz max B Current Noise Density f ≥ 1MHz 2.1 2.6 2.8 3.0 pA/ √Hz max B DC PERFORMANCE Open-Loop Voltage Gain (AOL)VO = VCM ± 0.5V 66 56 54 53 dB min A Input Offset Voltage ±2 ±6 ±7 ±8mV max A Average Drift — ±14 ±14 µV/°Cmax B Input Bias Current(4) +3 ±10 ±11 ±12 µAmax A Average Drift — ±25 ±25 nA/ °Cmax B Input Offset Current ±0.4 ±2 ±2.5 ±3 µAmax A Average Drift — ±15 ±15 nA/ °Cmax B INPUT Common-Mode Rejection Ratio Input Referred, VCM ±0.5V 58 54 53 52 dB min A Common-Mode Input Range(5) VCM ±0.8 VCM ±0.7 VCM ±0.7 VCM ±0.6 V min A Input Impedance M Ω || pF typ C Differential-Mode 0.32 || 1 Common-Mode 3.5 || 1 M Ω || pF typ C OUTPUT VH = VCM + 1.8V, VL = VCM – 1.8V Output Voltage Range RL ≥ 500Ω VCM ±1.6 VCM ±1.4 VCM ±1.4 VCM ±1.3 V min A Current Output, Sourcing +70 +60 +55 +50 mA min A Sinking –70 –60 –55 –50 mA min A Closed-Loop Output Impedance G = +4, f < 100kHz 0.2 Ω typ C POWER SUPPLY Operating Voltage, Specified 5 V typ C Maximum — +12 +12 +12 V max A Quiescent Current, Maximum VS = +5V 14.3 14.9 15.1 15.3 mA max A Minimum VS = +5V 14.3 13.6 13.4 13.2 mA min A Power-Supply Rejection Ratio VS = 4.5V to 5.5V +PSRR (Input Referred) 70 dB typ C OPA699ID 0 °C to –40 °C to MIN/ TEST PARAMETER CONDITIONS +25 °C +25 °C(1) 70 °C(2) +85 °C(2) UNITS MAX LEVEL(3) ELECTRICAL CHARACTERISTICS: VS = +5V Boldface limits are tested at +25 °C. G = +6, RF = 750Ω, RL = 500Ω tied to VCM = +2.5V, VL = VCM –1.2V, and VH = VCM +1.2V, (see Figure 2 for AC performance only), unless otherwise noted. TYP MIN/MAX OVER TEMPERATURE NOTES: (1) Junction temperature = ambient temperature for low temperature limit and +25 °C Test Level A specifications. Junction temperature = ambient temperature +23 °C at high temperature limit Test Level A specifications. (2) Junction temperature = ambient at low temperature limit; junction temperature = ambient +1 °C at high temperature limit for over-temperature tested specifications. (3) Test Levels: (A) 100% tested at +25 °C. Over temperature limits by characterization and simulation. (B) Limits set by characterization and simulation. (C) Typical value for information only. (4) Current is considered positive out of node. (5) CMIR tested as < 3dB degradation from minimum CMRR at specified limits. (6) IVH (VH bias current) is negative, and IVL (VL bias current) is positive, under these conditions. See Note 3 and Figures 2 and 12. (7) Limiter feedthrough is the ratio of the output magnitude to the sinewave added to VH (or VL) when VIN = 0. (8) VH slew rate conditions are: VIN = VCM +0.4V, G = +6, VL = VCM –1.2V, VH = step between VCM +1.2V and VCM. VL slew rate conditions are similar. (9) Linearity Guardband is defined for an output sinusoid (f = 5MHz, VO = VCM ±1VPP) centered between the limiter levels (VH and VL). It is the difference between the limiter level and the peak output voltage where SFDR decreases by 3dB (see Figure 8). |
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