1

10.2± 0.2

0.8± 0.1

5.0± 0.5

1.4± 0.2

4.5± 0.2

0.4± 0.1

PIN

1.3± 0.1

1

3

2

2

4

0.1± 0.1

FEATURES

MECHANICAL DATA

Position: Any

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

am bient tem perature unless otherwise specified.

UNITS

Maximum recurrent peak reverse voltage

V

Maximum RMS Voltage

V

Maximum DC blocking voltage

V

Maximum average forw ard total device

A

Peak forw ard surge current 8.3ms single half

A

Maximum forw ard

voltage

(Note 1)

)

Maximum reverse current

@T

at rated DC blocking voltage

@T

Maximum thermal resistance (Note2)

/W

Operating junction temperature range

Storage temperature range

2. Thermal resistance from junction to case.

m A

30

35

40

45

50

60

90

100

16

150

21

25

28

32

35

42

63

70

30

35

40

45

50

60

90

100

VOLTAGE RANGE: 30 - 100 V

CURRENT: 16 A

Metal silicon junction, m ajority carrier conduction.

SCHOTTKY BARRIER RECTIFIERS

High current capacity, low forward voltage drop.

NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle.

-

55 ---- + 175

-

55 ---- + 150

Term inals:Solderable per MIL-STD-750,

1 1

Method 2026

0.2

1.0

1.5

MBRB1630---MBRB16100

MBRB MBRB MBRB MBRB MBRB MBRB MBRB MBRB

1630

1635

1640

1645 1650

1660

1690 16100

Guard ring for over voltage protection.

High surge capacity.

For use in low voltage, high frequency inverters, free

Polarity: As m arked

Weight: 0.087 ounces,2.2 gram

40

50

V

0.63

0.57

0.75

0.85

0.65

-

Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%.

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr