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MBRB2070CT Datasheet(PDF) 2 Page - Diode Semiconductor Korea |
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MBRB2070CT Datasheet(HTML) 2 Page - Diode Semiconductor Korea |
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2 / 2 page  10 1 100 4000 1000 100 0.1 10 TJ=25 f=1.0MHz Vsig=50MVp-p 0 0.3 0.6 1.0 0.01 0.1 0.1 0.2 0.7 0.5 0.4 0.8 0.9 1.1 1.2 40 10 1 TJ=125 TJ=25 Pulse Width=300 µs 1% Duty Cycle 25 150 1 1 0 1 00 125 100 75 50 175 TJ=TJmax 8.3ms Single Half Sine Wave (JEDEC Method) 50 10 0 5 0 20 15 25 100 150 Resistive or inductive Load 0 20 40 60 80 100 0.001 0.01 0.1 1 10 40 TJ=125 TJ=75 TJ=25 MBRB2070CT---MBRB20100CT FIG.3 -- TYPICAL INSTANTANEOUS FORWARD 11111vCHARACTERISTICS PER LEG FIG.4 -- TYPICAL REVERSE CHARACTERISTICS bn PER LEG 111 1FIG.5--TYPICAL JUNCTION CAPACITANCE PER LEG CASE TEMPERATURE PERCENT OF RATED PEAK REVERSE VOLTAGE, REVERSE VOLTAGE,VOLTS FIG.1 -- FORWARD CURRENT DERATING CURVE FIG.2 -- MAXIMUM NON-REPETITIVE PEAK cc FORWARD SURGE CURRENT PERLEG NUMBER OF CYCLES AT 60Hz INSTANTANEOUS FORWARD VOLTAGE,VOLTS www.diode.kr Diode Semiconductor Korea |
Similar Part No. - MBRB2070CT |
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Similar Description - MBRB2070CT |
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