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K4E641612D Datasheet(PDF) 4 Page - Samsung semiconductor |
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K4E641612D Datasheet(HTML) 4 Page - Samsung semiconductor |
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4 / 36 page  CMOS DRAM K4E661612D,K4E641612D Industrial Temperature *Note : I CC1 , I CC3 , ICC4 and I CC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. I CC is specified as an average current. In I CC1 , ICC3 and I CC6, address can be changed maximum once while RAS =V IL. In I CC4 , address can be changed maximum once within one EDO mode cycle time, t HPC . DC AND OPERATING CHARACTERISTICS (Continued) I CC1* : Operating Current ( RAS and UCAS , LCAS , Address cycling @ t RC =min.) I CC2 : Standby Current ( RAS = UCAS = LCAS = W =V IH ) I CC3* : RAS -only Refresh Current ( UCAS = LCAS =V IH , RAS , Address cycling @ tRC =min.) I CC4* : Extended Data Out Mode Current ( RAS =V IL , UCAS or LCAS , Address cycling @ tHPC =min.) I CC5 : Standby Current ( RAS = UCAS = LCAS = W =V CC -0.2V) I CC6* : CAS -Before- RAS Refresh Current (RAS and UCAS or LCAS cycling @ t RC =min) I CC7 : Battery back-up current, Average power supply current, Battery back-up mode Input high voltage(V IH )=V CC -0.2V, Input low voltage(V IL )=0.2V, UCAS , LCAS = CAS -before- RAS cycling or 0.2V W , OE =V IH , Address=Don ′t care, DQ=Open, T RC=31.25us I CCS : Self Refresh Current RAS = UCAS = LCAS =0.2V, W = OE =A0 ~ A12(A11)=V CC -0.2V or 0.2V, DQ0 ~ DQ15=V CC -0.2V, 0.2V or Open Symbol Power Speed Max Units K4E661612D K4E641612D I CC1 Don ′t care -45 -50 -60 90 80 70 130 120 110 mA mA mA I CC2 Normal L Don ′t care 1 1 1 1 mA mA I CC3 Don ′t care -45 -50 -60 90 80 70 130 120 110 mA mA mA I CC4 Don ′t care -45 -50 -60 100 90 80 100 90 80 mA mA mA I CC5 Normal L Don ′t care 0.5 200 0.5 200 mA uA I CC6 Don ′t care -45 -50 -60 130 120 110 130 120 110 mA mA mA I CC7 L Don ′t care 350 350 uA I CCS L Don ′t care 350 350 uA |
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