K6X8016T3B datasheet(6/9 Pages) SAMSUNG

Part #	K6X8016T3B

Description	512Kx16 bit Low Power Full CMOS Static RAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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K6X8016T3B Family

Revision 1.0

September 2003

6

CMOS SRAM

Address

Data Out

Previous Data Valid

Data Valid

TIMING DIAGRAMS

TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH, UB or/and LB=VIL)

TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)

Data Valid

High-Z

tRC

CS

Address

UB, LB

OE

Data out

tAA

tRC

tOH

tAA

tCO

tBA

tOE

tOLZ

tBLZ

tLZ

tOHZ

tBHZ

tHZ

NOTES (READ CYCLE)

1.

tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage

levels.

2. At any given temperature and voltage condition,

tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device

interconnection.

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K6X8016T3B Datasheet(PDF) 6 Page - Samsung semiconductor

K6X8016T3B Datasheet(HTML) 6 Page - Samsung semiconductor

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