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K6X8016T3B-Q Datasheet(PDF) 1 Page - Samsung semiconductor |
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K6X8016T3B-Q Datasheet(HTML) 1 Page - Samsung semiconductor |
1 / 9 page K6X8016T3B Family Revision 1.0 September 2003 1 CMOS SRAM Document Title 512Kx16 bit Low Power Full CMOS Static RAM Revision History Revision No. 0.0 0.1 1.0 Remark Preliminary Preliminary Final History Initial draft Revised - Deleted 44-TSOP2-400R package type. Finalized - Changed ICC1 from 4mA to 3mA - Changed ICC2 from 45mA to 30mA - Changed ISB1(industrial) from 30 µA to 15µA - Changed ISB1(Automotive) from 40 µA to 25µA Draft Date October 31, 2002 December 11, 2002 September 16, 2003 The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to yourquestions about device. If you have any questions, please contact the SAMSUNG branch offices. |
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