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DCR6140H40 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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DCR6140H40 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 10 page SEMICONDUCTOR DCR6140H42 2/10 www.dynexsemi.com CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IT(AV) Mean on-state current Half wave resistive load 6138 A IT(RMS) RMS value - 9642 A IT Continuous (direct) on-state current - 8409 A SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 90.91 kA I 2t I 2t for fusing VR = 0 41.32 MA 2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.004255 °C/W Single side cooled Anode DC - 0.008 °C/W Cathode DC - 0.0093 °C/W Rth(c-h) Thermal resistance – case to heatsink Clamping force 135.0kN Double side - 0.0009 °C/W (with mounting compound) Single side - 0.0018 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -55 125 °C Fm Clamping force 120 155 kN |
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