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K9K2G08Q0M Datasheet(PDF) 3 Page - Samsung semiconductor |
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K9K2G08Q0M Datasheet(HTML) 3 Page - Samsung semiconductor |
3 / 40 page FLASH MEMORY 3 K9W4G08U1M K9W4G16U1M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M K9K2G16U0M GENERAL DESCRIPTION FEATURES • Voltage Supply -1.8V device(K9K2GXXQ0M): 1.7V~1.95V -3.3V device(K9XXGXXUXM): 2.7 V ~3.6 V • Organization - Memory Cell Array -X8 device(K9K2G08X0M) : (256M + 8,192K)bit x 8bit -X16 device(K9K2G16X0M) : (128M + 4,096K)bit x 16bit - Data Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit - Cache Register -X8 device(K9K2G08X0M): (2K + 64)bit x8bit -X16 device(K9K2G16X0M): (1K + 32)bit x16bit • Automatic Program and Erase - Page Program -X8 device(K9K2G08X0M): (2K + 64)Byte -X16 device(K9K2G16X0M): (1K + 32)Word - Block Erase -X8 device(K9K2G08X0M): (128K + 4K)Byte -X16 device(K9K2G16X0M): (64K + 2K)Word • Page Read Operation - Page Size - X8 device(K9K2G08X0M): 2K-Byte - X16 device(K9K2G16X0M) : 1K-Word - Random Read : 25 µs(Max.) - Serial Access 1.8V device(K9K2GXXQ0M): 80ns(Min.) 3.3V device(K9XXGXXUXM): 50ns(Min.) 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory • Fast Write Cycle Time - Program time : 300 µs(Typ.) - Block Erase Time : 2ms(Typ.) • Command/Address/Data Multiplexed I/O Port • Hardware Data Protection - Program/Erase Lockout During Power Transitions • Reliable CMOS Floating-Gate Technology - Endurance : 100K Program/Erase Cycles - Data Retention : 10 Years • Command Register Operation • Cache Program Operation for High Performance Program • Power-On Auto-Read Operation • Intelligent Copy-Back Operation • Unique ID for Copyright Protection • Package : - K9K2GXXX0M-YCB0/YIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9K2G08U0M-VCB0/VIB0 48 - Pin WSOP I (12X17X0.7mm) - K9K2GXXX0M-PCB0/PIB0 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch)- Pb-free Package - K9K2G08U0M-FCB0/FIB0 48 - Pin WSOP I (12X17X0.7mm)- Pb-free Package * K9K2G08U0M-V,F(WSOPI ) is the same device as K9K2G08U0M-Y,P(TSOP1) except package type. - K9W4GXXU1M-YCB0,PCB0/YIB0,PIB0 : Two K9K2G08U0M stacked. 48 - Pin TSOP I (12 x 20 / 0.5 mm pitch) - K9W4GXXU1M-KCB0,ECB0/KIB0,EIB0 : Two K9K2G08U0M stacked. 48 - Pin TSOP I (12 x 17 / 0.5 mm pitch) Offered in 256Mx8bit or 128Mx16bit, the K9K2GXXX0M is 2G bit with spare 64M bit capacity. Its NAND cell provides the most cost- effective solution for the solid state mass storage market. A program operation can be performed in typical 300 µs on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 80ns(1.8V device) or 50ns(3.3V device) cycle time per byte(X8 device) or word(X16 device). The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verifi- cation and margining of data. Even the write-intensive systems can take advantage of the K9K2GXXX0M ′s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K2GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility. An ultra high density solution having two 2Gb stacked with two chip selects is also available in standard TSOPI pack- age. PRODUCT LIST Part Number Vcc Range Organization PKG Type K9K2G08Q0M-Y,P 1.7 ~ 1.95V X8 TSOP1 K9K2G16Q0M-Y,P X16 K9XXG08UXM-Y,P,K,E 2.7 ~ 3.6V X8 K9XXG16UXM-Y,P,K,E X16 K9K2G08U0M-V,F X8 WSOP1 |
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