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DMC4029SK4 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMC4029SK4 Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 10 page DMC4029SK4 Document number: DS37823 Rev. 3 - 2 2 of 10 www.diodes.com June 2016 © Diodes Incorporated DMC4029SK4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value_Q1 Value_Q2 Unit Drain-Source Voltage VDSS 40 -40 V Gate-Source Voltage VGSS ±20 ±20 V Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 8.3 6.7 -6.1 -4.9 A t<10s TA = +25°C TA = +70°C ID 11.8 9.4 -8.6 -6.9 A Maximum Body Diode Forward Current (Note 6) IS 2.5 -2.5 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 45 -35 A Avalanche Current, L = 0.1mH (Note 8) IAS 21 -20 A Avalanche Energy, L = 0.1mH (Note 8) EAS 22 20 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 1.5 W TA = +70°C 1.0 Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 88 °C/W t<10s 40 Total Power Dissipation (Note 6) TA = +25°C PD 2.9 W TA = +70°C 1.6 Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 42 °C/W t<10s 20 Thermal Resistance, Junction to Case (Note 7) RθJC 4.5 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics — Q1 N-Channel (@T A = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40V, VGS = 0V Gate-Source Leakage IGSS 100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1.0 3.0 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 15 24 m Ω VGS = 10V, ID = 6A 20 32 VGS = 4.5V, ID = 5A Diode Forward Voltage VSD 0.7 1.0 V VGS = 0V, IS = 1.0A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance CISS 1,060 pF VDS = 20V, VGS = 0V, f = 1.0MHz Output Capacitance COSS 84 Reverse Transfer Capacitance CRSS 58 Gate Resistance RG 1.6 Ω VDS = 0V, VGS = 0V, f = 1.0MHz Total Gate Charge (VGS = 4.5V) QG 8.8 nC VDS = 20V, ID = 8A Total Gate Charge (VGS = 10V) QG 19.1 Gate-Source Charge QGS 3.0 Gate-Drain Charge QGD 2.5 Turn-On Delay Time tD(ON) 5.3 ns VDD = 25V, RL = 2.5Ω VGS = 10V, RG = 3Ω Turn-On Rise Time tR 7.1 Turn-Off Delay Time tD(OFF) 15.1 Turn-Off Fall Time tF 4.8 Body Diode Reverse Recovery Time tRR 10.5 ns IF = 8A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 4.15 nC IF = 8A, di/dt = 100A/μs |
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