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ELM34812AA-N

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■General description

■Features

■Maximum absolute ratings

■Thermal characteristics

Parameter

Symbol

Typ.

Max.

Unit

Note

Maximum junction-to-ambient

Steady-state

Rθja

62.5

°C/W

Parameter

Symbol

Limit

Unit

Note

Drain-source voltage

Vds

20

V

Gate-source voltage

Vgs

±12

V

Continuous drain current

Ta=25°C

Id

7

A

Ta=70°C

6

Pulsed drain current

Idm

38

A

3

Power dissipation

Tc=25°C

Pd

2.0

W

Tc=70°C

1.3

Junction and storage temperature range

Tj, Tstg

-55 to 150

°C

ELM34812AA-N uses advanced trench technology to

provide excellent Rds(on), low gate charge and low gate

resistance.

• Vds=20V

• Id=7A

• Rds(on) < 21mΩ (Vgs=4.5V)

• Rds(on) < 35mΩ (Vgs=2.5V)

Dual N-channel MOSFET

S1

D1

S2

D2

G2

G1

■Pin configuration

■Circuit

Pin No.

Pin name

1

SOURCE1

2

GATE1

3

SOURCE2

4

GATE2

5

DRAIN2

6

DRAIN2

7

DRAIN1

8

DRAIN1

SOP-8(TOP VIEW)

Ta=25°C. Unless otherwise noted.

4

3

2

1

5

6

7

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