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ELM53404CA-S Datasheet(PDF) 2 Page - ELM Electronics |
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ELM53404CA-S Datasheet(HTML) 2 Page - ELM Electronics |
2 / 4 page 2 ELM53404CA-S 4 - ■Electrical characteristics Parameter Symbol Condition Min. Typ. Max. Unit STATIC PARAMETERS Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 30 V Zero gate voltage drain current Idss Vds=30V, Vgs=0V 1 μA Ta=85°C 30 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 nA Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA 1.0 2.5 V On state drain current Id(on) Vgs=4.5V, Vds=5V 30 A Static drain-source on-resistance Rds(on) Vgs=10V, Id=2.6A 72 82 mΩ Vgs=4.5V, Id=2.0A 95 108 mΩ Forward transconductance Gfs Vds=10V, Id=6.1A 20 S Diode forward voltage Vsd Is=1.7A, Vgs=0V 0.8 1.2 V Max. body-diode continuous current Is 1.6 A DYNAMIC PARAMETERS Input capacitance Ciss Vgs=0V, Vds=15V, f=1MHz 280 pF Output capacitance Coss 40 pF Reverse transfer capacitance Crss 20 pF SWITCHING PARAMETERS Total gate charge Qg Vgs=4.5V, Vds=15V Id=3.6A 2.3 3.0 nC Gate-source charge Qgs 1.0 nC Gate-drain charge Qgd 0.6 nC Turn-on delay time td(on) Vgs=10V, Vds=15V RL=15Ω, Id=1.0A Rgen=6Ω 10 15 ns Turn-on rise time tr 12 20 ns Turn-off delay time td(off) 15 25 ns Turn-off fall time tf 10 15 ns Single N-channel MOSFET Ta=25°C. Unless otherwise noted. |
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