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DMNH6022SSDQ-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMNH6022SSDQ-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMNH6022SSDQ Document number: DS38694 Rev. 4 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMNH6022SSDQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current VGS = 10V (Note 7) TC = +25°C TC = +100°C ID 22.6 16.0 A TA = +25°C TA = +70°C ID 7.1 5.9 A Pulsed Drain Current (10 μs pulse, duty cycle = 1%) IDM 45 A Maximum Continuous Body Diode Forward Current (Note 7) IS 2 A Avalanche Current L = 0.1mL (Note 8) IAS 22 A Avalanche Energy L = 0.1mL (Note 8) EAS 24 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 6) TA = +25°C PD 1.5 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 104 °C/W t<10s 60 Total Power Dissipation (Note 7) TA = +25°C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 7) Steady State RθJA 74 °C/W t<10s 42 Thermal Resistance, Junction to Case (Note 7) RθJC 7.25 Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 9) Gate Threshold Voltage VGS(TH) 1.0 — 3.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 21 27 m Ω VGS = 10V, ID = 5A 24 30 VGS = 6V, ID = 5A Diode Forward Voltage VSD — 0.8 1.2 V VGS = 0V, IS = 1.7A DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Ciss — 2127 — pF VDS = 25V, VGS = 0V, f = 1.0MHz Output Capacitance Coss — 86 — pF Reverse Transfer Capacitance Crss — 54 — pF Gate Resistance Rg — 2.0 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge at (VGS = 10V) Qg — 32 — nC VDS = 30V, ID = 6A Total Gate Charge at (VGS = 4.5V) Qg — 14 — nC Gate-Source Charge Qgs — 7 — nC Gate-Drain Charge Qgd — 4 — nC Turn-On Delay Time tD(ON) — 5.4 — ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 1A Turn-On Rise Time tR — 4.4 — ns Turn-Off Delay Time tD(OFF) — 30.4 — ns Turn-Off Fall Time tF — 8.4 — ns Body Diode Reverse Recovery Time tRR — 18.1 — ns IF = 1.7A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 12.5 — nC IF = 1.7A, di/dt = 100A/μs Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMNH6022SSDQ-13 |
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Similar Description - DMNH6022SSDQ-13 |
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