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DMT3003LFG Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMT3003LFG Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMT3003LFG Document number: DS37819 Rev. 2 - 2 2 of 7 www.diodes.com June 2016 © Diodes Incorporated DMT3003LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 6) VGS = 10V TC = +25°C TC = +70°C ID 100 90 A Continuous Drain Current (Note 5) VGS = 10V TA = +25°C TA = +70°C ID 22 18 A Maximum Continuous Body Diode Forward Current (Note 5) IS 3 A Pulsed Drain Current (10 μs Pulse, Duty Cycle = 1%) IDM 100 A Avalanche Current, L=1mH IAS 16 A Avalanche Energy, L=1mH EAS 250 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) TA = +25°C PD 2.4 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 52 °C/W Total Power Dissipation (Note 5) TC = +25°C PD 62 W Thermal Resistance, Junction to Case (Note 6) RθJC 2 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 30 — — V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 24V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = +20V, VDS = 0V VGS = -16V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 2.4 3.2 m Ω VGS = 10V, ID = 20A — 4 5.5 VGS = 4.5V, ID = 15A Diode Forward Voltage VSD — 0.75 1 V VGS = 0V, IS = 10A DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance CISS — 2,370 — pF VDS = 15V, VGS = 0V, f = 1MHz Output Capacitance COSS — 1,360 — Reverse Transfer Capacitance CRSS — 240 — Gate Resistance RG — 0.6 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = 4.5V) QG — 20 — nC VDS = 15V, ID = 20A Total Gate Charge (VGS = 10V) QG — 44 — Gate-Source Charge QGS — 7 — Gate-Drain Charge QGD — 8 — Turn-On Delay Time tD(ON) — 6.2 — ns VDD = 15V, VGS = 10V, RL = 0.75Ω, RG = 3Ω, ID = 20A Turn-On Rise Time tR — 4.3 — Turn-Off Delay Time tD(OFF) — 21 — Turn-Off Fall Time tF — 8 — Bodyy Diode Reverse Recovery Time tRR — 25 — ns IF = 15A, di/dt = 500A/μs Body Diode Reverse Recovery Charge QRR — 37 — nC Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Thermal resistance from junction to soldering point (on the exposed drain pad). 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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