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NCP716MT25TBG Datasheet(PDF) 9 Page - ON Semiconductor |
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NCP716MT25TBG Datasheet(HTML) 9 Page - ON Semiconductor |
9 / 18 page NCP716 www.onsemi.com 9 Table 10. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V −40 °C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 29) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage 0 < IOUT < 80 mA VIN 6.0 24 V Output Voltage Accuracy 6.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 4.9 5.0 5.1 V Turn−On Time IOUT = 1 mA tON − 700 − ms Undervoltage Lock−Out VIN rising UVLO − 2.1 − V Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 4 10 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 27) VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 310 500 mV Maximum Output Current (Note 30) IOUT 110 mA Ground current 0 < IOUT < 80 mA, −40 < TA < 85°C IGND 3.2 4.2 mA 0 < IOUT < 80 mA, VIN = 24 V 5.8 mA Power Supply Rejection Ratio VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz PSRR 54 dB Output Noise Voltage VOUT = 5.0 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 220 mVrms Thermal Shutdown Temperature (Note 28) Temperature increasing from TJ = +25°C TSD 155 °C Thermal Shutdown Hysteresis (Note 28) Temperature falling from TSD TSDH − 25 − °C 27. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 5.0 V 28. Guaranteed by design and characterization. 29. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25 °C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 30. Respect SOA |
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