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NCP1216 Datasheet(PDF) 3 Page - ON Semiconductor |
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NCP1216 Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 18 page NCP1216, NCP1216A www.onsemi.com 3 Q Set Reset 1 V HV 1 2 3 4 5 6 7 8 Drv GND NC Current Sense Adj FB Skip Cycle Comparator 1.1 V Overload? Fault Duration 20 k 19 k Clock Jittering 57 k 25 k 96 k 25 k 5 V Figure 2. Internal Circuit Architecture − + − + Pull−up Resistor UVLO High and Low Internal Regulator HV Current Source Q Flip−Flop DCmax = 75% Reset 65 kHz 100 kHz 133kHz Ramp Compensation − + Vref 220 ns L.E.B $500 mA VCC Internal VCC 1 ms SS* * Available for ”A” version only. MAXIMUM RATINGS Rating Symbol Value Unit Power Supply Voltage, VCC Pin VCC 16 V Maximum Voltage on Low Power Pins (except Pin 8 and Pin 6) −0.3 to 10 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Decoupled to Ground with 10 mF 500 V Maximum Voltage on Pin 8 (HV), Pin 6 (VCC) Grounded 450 V Minimum Operating Voltage on Pin 8 (HV) 28 V Maximum Current into all Pins except VCC (Pin 6) and HV (Pin 8) when 10 V ESD Di- odes are Activated 5.0 mA Thermal Resistance Junction−to−Air, PDIP−7 Version Thermal Resistance Junction−to−Air, SOIC−8 Version RqJ−A RqJ−A 100 178 °C/W Maximum Junction Temperature TJMAX 150 °C Temperature Shutdown TSD 155 °C Hysteresis in Shutdown 30 °C Storage Temperature Range −60 to +150 °C ESD Capability, HBM Model (All Pins except VCC and HV) 2.0 kV ESD Capability, Machine Model 200 V Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. This device series contains ESD protection rated using the following tests: Human Body Model (HBM) 2000 V per JEDEC Standard JESD22, Method A114E. Machine Model (MM) 200 V per JEDEC Standard JESD22, Method A115A. |
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Similar Description - NCP1216 |
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