NCP114BMX105TCG datasheet(3/17 Pages) ONSEMI

Part #	NCP114BMX105TCG

Description	300 mA CMOS Low Dropout Regulator

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ELECTRICAL CHARACTERISTICS

−40

°C ≤ TJ ≤ 85°C; VIN = VOUT(NOM) + 1 V for VOUT options greater than 1.5 V. Otherwise VIN = 2.5 V, whichever is greater; IOUT = 1 mA,

CIN = COUT = 1 mF, unless otherwise noted. VEN = 0.9 V. Typical values are at TJ = +25°C. Min./Max. are for TJ = −40°C and TJ = +85°C

respectively (Note 4).

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Operating Input Voltage

VIN

1.7

5.5

V

Output Voltage Accuracy

−40

°C ≤ TJ ≤ 85°C

VOUT ≤ 2.0 V

VOUT

−40

+40

mV

VOUT > 2.0 V

−2

+2

%

Line Regulation

VOUT + 0.5 V

≤ VIN ≤ 5.5 V (VIN ≥ 1.7 V)

RegLINE

0.01

0.1

%/V

Load Regulation − UDFN package

IOUT = 1 mA to 300 mA

RegLOAD

12

30

mV

Load Regulation − TSOP−5 package

28

45

Load Transient

IOUT = 1 mA to 300 mA or 300 mA to 1 mA

in 1

ms, COUT = 1 mF

TranLOAD

−50/

+30

mV

Dropout Voltage − UDFN package (Note 5)

IOUT = 300 mA

VOUT = 1.5 V

VDO

365

460

mV

VOUT = 1.85 V

245

330

VOUT = 2.8 V

155

230

VOUT = 3.0 V

145

220

VOUT = 3.1 V

140

210

VOUT = 3.3 V

135

200

Dropout Voltage − TSOP package (Note 5)

IOUT = 300 mA

VOUT = 1.5 V

VDO

380

485

mV

VOUT = 1.85 V

260

355

VOUT = 2.8 V

170

255

VOUT = 3.0 V

160

245

VOUT = 3.1 V

155

235

VOUT = 3.3 V

150

225

Output Current Limit

VOUT = 90% VOUT(nom)

ICL

300

600

mA

Ground Current

IOUT = 0 mA

IQ

50

95

mA

Shutdown Current

VEN

≤ 0.4 V, VIN = 5.5 V

IDIS

0.01

1

mA

EN Pin Threshold Voltage

High Threshold

Low Threshold

VEN Voltage increasing

VEN Voltage decreasing

VEN_HI

VEN_LO

0.9

0.4

V

EN Pin Input Current

VEN = 5.5 V

IEN

0.3

1.0

mA

Power Supply Rejection Ratio

VIN = 3.6 V, VOUT = 3.1 V

IOUT = 150 mA

f = 1 kHz

PSRR

75

dB

Output Noise Voltage

VIN = 2.5 V, VOUT = 1.8 V, IOUT = 150 mA

f = 10 Hz to 100 kHz

VN

70

mVrms

Thermal Shutdown Temperature

Temperature increasing from TJ = +25

°C

TSD

160

°C

Thermal Shutdown Hysteresis

Temperature falling from TSD

TSDH

20

°C

Active Output Discharge Resistance

VEN < 0.4 V, Version A only

RDIS

100

W

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at

TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.

5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 1 V.

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