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NCV8703SN33T1G Datasheet(PDF) 3 Page - ON Semiconductor |
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NCV8703SN33T1G Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 17 page  NCV8703 http://onsemi.com 3 Table 3. THERMAL CHARACTERISTICS (Note 3) Rating Symbol Value Unit Thermal Characteristics, TSOP−5, Thermal Resistance, Junction−to−Air Thermal Characterization Parameter, Junction−to−Lead (Pin 2) qJA yJL 241 129 C/W Thermal Characteristics, XDFN6 1.5 x 1.5 mm Thermal Resistance, Junction−to−Air Thermal Characterization Parameter, Junction−to−Board qJA yJB 146 77 C/W 3. Single component mounted on 1 oz, FR4 PCB with 645 mm2 Cu area. Table 4. ELECTRICAL CHARACTERISTICS (−40C TJ 125C; VIN = VOUT(NOM) + 0.5 V or 2.0 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF unless otherwise noted. Typical values are at TJ = +25C.) (Note 4) Parameter Test Conditions Symbol Min Typ Max Unit Operating Input Voltage VIN 2.0 5.5 V Undervoltage Lock−out VIN rising UVLO 1.2 1.6 1.9 V Output Voltage Accuracy VOUT + 0.5 V VIN 5.5 V, IOUT = 0 − 300 mA VOUT −2 +2 % Line Regulation VOUT + 0.5 V VIN 4.5 V, IOUT = 10 mA RegLINE 450 mV/V VOUT + 0.5 V VIN 5.5 V, IOUT = 10 mA RegLINE 600 mV/V Load Regulation IOUT = 0 mA to 300 mA RegLOAD 20 mV/mA Load Transient IOUT = 1 mA to 300 mA or 300 mA to 1 mA in 1 ms, COUT = 1 mF TranLOAD −100/ +150 mV Dropout Voltage (Note 5) IOUT = 300 mA, VOUT(nom) = 2.5 V VDO 180 300 mV Output Current Limit VOUT = 90% VOUT(nom) ICL 310 450 750 mA Quiescent Current IOUT = 0 mA IQ 12 20 mA Ground Current IOUT = 300 mA IGND 200 mA Shutdown Current VEN 0.4 V, TJ = +25C IDIS 0.12 mA VEN 0 V, VIN = 2.0 to 4.5 V, TJ = −40 to +85C IDIS 0.55 2 mA EN Pin Threshold Voltage High Threshold Low Threshold VEN Voltage Increasing VEN Voltage Decreasing VEN_HI VEN_LO 0.9 0.4 V EN Pin Input Current VEN = 5.5 V IEN 100 500 nA Turn−On Time COUT = 1.0 mF, from assertion EN pin to 98% VOUT(nom) tON 200 ms Power Supply Rejection Ratio VIN = 3 V, VOUT = 2.5 V IOUT = 300 mA f = 100 Hz f = 1 kHz f = 10 kHz PSRR 70 68 53 dB Output Noise Voltage VOUT = 2.5 V, VIN = 3 V, IOUT = 300 mA f = 100 Hz to 100 kHz VN 13 mVrms Thermal Shutdown Temperature Temperature increasing from TJ = +25C TSD 160 C Thermal Shutdown Hysteresis Temperature falling from TSD TSDH − 20 − C 4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA = 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V. |
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