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TDA8359J Datasheet(PDF) 2 Page - NXP Semiconductors |
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TDA8359J Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 20 page 2002 Jan 21 2 Philips Semiconductors Product specification Full bridge vertical deflection output circuit in LVDMOS TDA8359J FEATURES • Few external components required • High efficiency fully DC-coupled vertical bridge output circuit • Vertical flyback switch with short rise and fall times • Built-in guard circuit • Thermal protection circuit • Improved EMC performance due to differential inputs. GENERAL DESCRIPTION The TDA8359J is a power circuit for use in 90 ° and 110° colour deflection systems for 25 to 200 Hz field frequencies, and for 4 : 3 and 16 : 9 picture tubes. The IC contains a vertical deflection output circuit, operating as a high efficiency class G system. The full bridge output circuit allows DC coupling of the deflection coil in combination with single positive supply voltages. The IC is constructed in a Low Voltage DMOS (LVDMOS) process that combines bipolar, CMOS and DMOS devices. DMOS transistors are used in the output stage because of absence of second breakdown. QUICK REFERENCE DATA ORDERING INFORMATION SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Supplies VP supply voltage 7.5 12 18 V VFB flyback supply voltage 2 × VP 45 66 V Iq(P)(av) average quiescent supply current during scan − 10 15 mA Iq(FB)(av) average quiescent flyback supply current during scan −− 10 mA Ptot total power dissipation −− 10 W Inputs and outputs Vi(p-p) input voltage (peak-to-peak value) − 1000 1500 mV Io(p-p) output current (peak-to-peak value) −− 3.2 A Flyback switch Io(peak) maximum (peak) output current t ≤ 1.5 ms −−±1.8 A Thermal data; in accordance with IEC 60747-1 Tstg storage temperature −55 −+150 °C Tamb ambient temperature −25 −+85 °C Tj junction temperature −− 150 °C TYPE NUMBER PACKAGE NAME DESCRIPTION VERSION TDA8359J DBS9P plastic DIL-bent-SIL power package; 9 leads (lead length 12/11 mm); exposed die pad SOT523-1 |
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